Single Ion implanted silicon devices towards few photons emission regime for space quantum communications

Enrico Prati, Takahiro Shinada, Takashi Tanii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Employment of erbium in silicon devices suffers of difficulties preventing to act as reliable photon source. We review the convergence between single ion implantation and few photon emission regime at room temperature at 1550 nm.

Original languageEnglish
Title of host publicationQuantum 2.0, QUANTUM 2020
PublisherThe Optical Society
ISBN (Electronic)9781557528209
Publication statusPublished - 2020
EventOSA Quantum 2.0 Conference, QUANTUM 2020 - Virtual, Online, United States
Duration: 2020 Sep 142020 Sep 17

Publication series

NameOptics InfoBase Conference Papers

Conference

ConferenceOSA Quantum 2.0 Conference, QUANTUM 2020
Country/TerritoryUnited States
CityVirtual, Online
Period20/9/1420/9/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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