Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar

T. Sato, T. Yamaguchi, W. Izumida, S. Tarucha, H. Z. Song, T. Miyazawa, Y. Nakata, T. Ohshima, N. Yokoyama

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

By using the semiconductor nano-pillar with a graded-dope configuration, we implemented the measurement for a single-electron transport through an individual InAs self-assembled quantum dot (SAQD). An atomic-force microscope observation showed that the SAQD had a disk-like shape with a diameter of ~30 nm. We succeeded in observing a significant diamagnetic shift of the Coulomb oscillation peak under the magnetic field applied perpendicular to the disk plane. The measurement gave us a lateral confinement energy of 14 meV and an electron effective mass of 0.039, which provided us with quantitative evidence that the constituent material of the observed quantum dot originates from the InAs SAQD.

Original languageEnglish
Pages (from-to)506-510
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
Publication statusPublished - 2004 Mar 1
Externally publishedYes
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • Fock-Darwin state
  • Quantum dot
  • Self-assembled InAs dot
  • Single-electron transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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