Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar

T. Sato; T. Yamaguchi; W. Izumida; S. Tarucha; H. Z. Song; T. Miyazawa; Y. Nakata; T. Ohshima; N. Yokoyama

doi:10.1016/j.physe.2003.11.070

Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar

T. Sato, T. Yamaguchi, W. Izumida, S. Tarucha, H. Z. Song, T. Miyazawa, Y. Nakata, T. Ohshima, N. Yokoyama

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

By using the semiconductor nano-pillar with a graded-dope configuration, we implemented the measurement for a single-electron transport through an individual InAs self-assembled quantum dot (SAQD). An atomic-force microscope observation showed that the SAQD had a disk-like shape with a diameter of ~30 nm. We succeeded in observing a significant diamagnetic shift of the Coulomb oscillation peak under the magnetic field applied perpendicular to the disk plane. The measurement gave us a lateral confinement energy of 14 meV and an electron effective mass of 0.039, which provided us with quantitative evidence that the constituent material of the observed quantum dot originates from the InAs SAQD.

Original language	English
Pages (from-to)	506-510
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.070
Publication status	Published - 2004 Mar
Externally published	Yes
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

Fock-Darwin state
Quantum dot
Self-assembled InAs dot
Single-electron transport

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.11.070

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Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar. / Sato, T.; Yamaguchi, T.; Izumida, W.; Tarucha, S.; Song, H. Z.; Miyazawa, T.; Nakata, Y.; Ohshima, T.; Yokoyama, N.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 21, No. 2-4, 03.2004, p. 506-510.

Research output: Contribution to journal › Conference article › peer-review

@article{75be57aaf4fd4f0ebf2e544702bcd726,

title = "Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar",

abstract = "By using the semiconductor nano-pillar with a graded-dope configuration, we implemented the measurement for a single-electron transport through an individual InAs self-assembled quantum dot (SAQD). An atomic-force microscope observation showed that the SAQD had a disk-like shape with a diameter of ~30 nm. We succeeded in observing a significant diamagnetic shift of the Coulomb oscillation peak under the magnetic field applied perpendicular to the disk plane. The measurement gave us a lateral confinement energy of 14 meV and an electron effective mass of 0.039, which provided us with quantitative evidence that the constituent material of the observed quantum dot originates from the InAs SAQD.",

keywords = "Fock-Darwin state, Quantum dot, Self-assembled InAs dot, Single-electron transport",

author = "T. Sato and T. Yamaguchi and W. Izumida and S. Tarucha and Song, {H. Z.} and T. Miyazawa and Y. Nakata and T. Ohshima and N. Yokoyama",

note = "Funding Information: The authors thank Dr. M. Stopa, Dr. T. Inoshita and Dr. T. Ota for valuable discussions. This research was jointly supported by IT Program, MEXT.; Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.070",

language = "English",

volume = "21",

pages = "506--510",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar

AU - Sato, T.

AU - Yamaguchi, T.

AU - Izumida, W.

AU - Tarucha, S.

AU - Song, H. Z.

AU - Miyazawa, T.

AU - Nakata, Y.

AU - Ohshima, T.

AU - Yokoyama, N.

N1 - Funding Information: The authors thank Dr. M. Stopa, Dr. T. Inoshita and Dr. T. Ota for valuable discussions. This research was jointly supported by IT Program, MEXT.

PY - 2004/3

Y1 - 2004/3

N2 - By using the semiconductor nano-pillar with a graded-dope configuration, we implemented the measurement for a single-electron transport through an individual InAs self-assembled quantum dot (SAQD). An atomic-force microscope observation showed that the SAQD had a disk-like shape with a diameter of ~30 nm. We succeeded in observing a significant diamagnetic shift of the Coulomb oscillation peak under the magnetic field applied perpendicular to the disk plane. The measurement gave us a lateral confinement energy of 14 meV and an electron effective mass of 0.039, which provided us with quantitative evidence that the constituent material of the observed quantum dot originates from the InAs SAQD.

AB - By using the semiconductor nano-pillar with a graded-dope configuration, we implemented the measurement for a single-electron transport through an individual InAs self-assembled quantum dot (SAQD). An atomic-force microscope observation showed that the SAQD had a disk-like shape with a diameter of ~30 nm. We succeeded in observing a significant diamagnetic shift of the Coulomb oscillation peak under the magnetic field applied perpendicular to the disk plane. The measurement gave us a lateral confinement energy of 14 meV and an electron effective mass of 0.039, which provided us with quantitative evidence that the constituent material of the observed quantum dot originates from the InAs SAQD.

KW - Fock-Darwin state

KW - Quantum dot

KW - Self-assembled InAs dot

KW - Single-electron transport

UR - http://www.scopus.com/inward/record.url?scp=1642359527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642359527&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.11.070

DO - 10.1016/j.physe.2003.11.070

M3 - Conference article

AN - SCOPUS:1642359527

VL - 21

SP - 506

EP - 510

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Single-electron transport through an individual InAs SAQD embedded in a graded-dope semiconductor nano-pillar

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Keywords

ASJC Scopus subject areas

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