We report on measurements of low-frequency noise in submicron Hall devices based on Alx Ga1-x AsGaAs heterostructures. In addition to the 1f -type noise caused by switching events in the n-AlGaAs layer we observe a random telegraph signal in the time domain at elevated temperatures which we attribute to trapping or detrapping of a single electron from a deep donor (DX -type) center located near the space charge region in the vicinity of the Alx Ga1-x AsGaAs interface. A simple two-level model accounts for the observed gate-voltage dependence of the electronic transition rates.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2006|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics