Single-electron switching in Alx Ga1-x AsGaAs Hall devices

Jens Müller, Yongqing Li, Stephan Von Molnár, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

We report on measurements of low-frequency noise in submicron Hall devices based on Alx Ga1-x AsGaAs heterostructures. In addition to the 1f -type noise caused by switching events in the n-AlGaAs layer we observe a random telegraph signal in the time domain at elevated temperatures which we attribute to trapping or detrapping of a single electron from a deep donor (DX -type) center located near the space charge region in the vicinity of the Alx Ga1-x AsGaAs interface. A simple two-level model accounts for the observed gate-voltage dependence of the electronic transition rates.

Original languageEnglish
Article number125310
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number12
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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