Single electron spectroscopy in a single pair of weakly coupled self-assembled InAs quantum dots

T. Ota, T. Hatano, K. Ono, S. Tarucha, H. Z. Song, Y. Nakata, T. Miyazawa, T. Ohshima, N. Yokoyama

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

Using a single electron transistor containing a single pair of weakly coupled self-assembled InAs quantum dots, we have studied the transport properties of elastic and inelastic single electron tunneling. We found a series of Coulomb diamonds above pinch off voltage and, below it, characteristic irregular structures in the current vs. source-drain voltage and gate voltage, consisting of "vertical lines" and "kinks". Based on a simple calculation, the vertical lines are assigned to elastic tunneling between aligned states of the two dots. The kinks come from change of electron number in the dots, observed in the inelastic tunneling regime through off-resonant states in the two dots.

Original languageEnglish
Pages (from-to)510-513
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - 2004 Apr 1
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • Coupled quantum dots
  • Self-assembled InAs quantum dots
  • Single electron transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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