Single domain observation for synthetic antiferromagnetically coupled bits with low aspect ratios

N. Tezuka, N. Koike, K. Inomata, S. Sugimoto

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Magnetization configuration and magnetization switching for monolayer bits with micron to submicron sizes were investigated. Magnetic force microscopy (MFM) images of bits demonstrated single domain structure for even a small aspect ratio of 1. Results showed the predominance of the synthetic antiferromagnetic pattern for ultrahigh bit density magnetic random access memory devices.

Original languageEnglish
Pages (from-to)604-606
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number4
DOIs
Publication statusPublished - 2003 Jan 27

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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