Single-crystalline films of the homologous series InGaO3(ZnO)m grown by reactive solid-phase epitaxy

Hiromichi Ohta, Kenji Nomura, Masahiro Orita, Masahiro Hirano, Kazushige Ueda, Toshiyuki Suzuki, Yuichi Ikuhara, Hideo Hosono

    Research output: Contribution to journalArticlepeer-review

    162 Citations (Scopus)


    Single-crystalline thin films of the homologous series InGaO3(ZnO)m (where m is an integer) are fabricated by the reactive solid-phase epitaxy (R-SPE) method. Specifically, the role of ZnO as epitaxial initiator layer for the growth mechanism is clarified. High-temperature annealing of bilayer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on yttria-stabilized zirconia (YSZ) substrate allows for the growth of single-crystalline film with controlled chemical composition. The epitaxial ZnO thin layer plays an essential role in determining the crystallographic orientation, while the ratio of the thickness of both layers controls the film composition.

    Original languageEnglish
    Pages (from-to)139-144
    Number of pages6
    JournalAdvanced Functional Materials
    Issue number2
    Publication statusPublished - 2003 Feb 1

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics


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