Single crystalline aluminum nitride films fabricated by nitriding α-Al2O3

Hiroyuki Fukuyama, Shin Ya Kusunoki, Akira Hakomori, Kenji Hiraga

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39 Citations (Scopus)

Abstract

Single crystalline aluminum nitride (AlN) is a key material for deep-ultraviolet light emitting devices. In the present study, high-quality single crystalline AlN films have been fabricated by nitriding α-Al 2O3 with a precise control of driving force of nitridation reaction. This process provides the 〈0001〉-axis oriented AN lilm as large as 50.8 mm in diameter formed on (0001) and (11 2̄ 0) planes of α-Al2O3 substrates. The crystalline qualities of the films have the values of full width at half maximum of rocking curves using (0002) and (10 1̄ 0) planes of AlN for tilt and twist components as follows; Tilt= 165 arc sec and twist=540 arc sec in the case of nitriding (0001) plane of α-Al22O3 and tilt= 127 arc sec and twist=237 arc sec in the case of nitriding (11 2̄ 0) plane of α-Al2O3.

Original languageEnglish
Article number024905
JournalJournal of Applied Physics
Volume100
Issue number2
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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