Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer

Wataru Nakao, Hiroyuki Fukuyama

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

A noble method forming single crystalline AlN films has been developed as a new substrate for blue/UV light emitters. Sapphire substrates have been nitrided by appropriate CO-N2 gas mixtures saturated with graphite based on the chemical potential diagram of the Al-N-O-C system. The nitrided surface of sapphire consists of consecutive layers of AlN and γ-aluminum oxynitride (γ-ALON) with low-level dislocation density, where the γ-ALON layer spontaneously forms as an equilibrium phase and acts as a buffer. The lattice mismatch between sapphire substrate and AlN layer has been effectively reduced by using the γ-ALON buffer, which significantly attributes to the growth of single crystalline AlN.

Original languageEnglish
Pages (from-to)302-308
Number of pages7
JournalJournal of Crystal Growth
Volume259
Issue number3
DOIs
Publication statusPublished - 2003 Dec
Externally publishedYes

Keywords

  • A1. Nitridation
  • A2. Single crystal growth
  • B1. Sapphire
  • B1. γ-aluminum oxynitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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