Single crystalline β-FeSi2 grown using high-purity FeSi2 source

Kouhei Gotoh; Hirokazu Suzuki; Haruhiko Udono; Isao Kikuma; Fumitaka Esaka; Masahito Uchikoshi; Minoru Isshiki

doi:10.1016/j.tsf.2007.02.066

Single crystalline β-FeSi₂ grown using high-purity FeSi₂ source

Kouhei Gotoh, Hirokazu Suzuki, Haruhiko Udono, Isao Kikuma, Fumitaka Esaka, Masahito Uchikoshi, Minoru Isshiki

Collaborative Research Division of Non-ferrousMetallurgy and Environmental Science

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We have investigated the effect of FeSi₂ source purity on the electrical property of β-FeSi₂ grown from solution. A high-purity FeSi₂ source avoided a contamination of Cu and W metals was synthesized by melting a high-purity Fe (5N) and Si (5N-up) in a quartz ampoule. Glow discharge mass spectrometry revealed that the purity of the FeSi₂ source synthesized using 5N-Fe and a quartz-ampoule-melting process is one order of magnitude higher than that of the conventional arc-melted FeSi₂ source using 4N-Fe. The β-FeSi₂ crystals grown using the high-purity FeSi₂ and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi₂ showed p-type. The carrier concentration of the n-type crystals was (4.9-6.3) × 10¹⁸ cm^{- 3}, which was more than 10 times higher than that of the p-type crystals (5.2 × 10¹⁷ cm^{- 3}). From the ICP-MS and SIMS analysis of the grown crystals, we found that dominant impurity concentrations (Cr, Mn, Co, Ni, Cu, Zn and W) in the p-type crystals were higher than those in the n-type ones. Therefore, the p-type conductivity of undoped crystals grown using Zn solvent results from unintentional doping by the high impurity level of the used FeSi₂ source.

Original language	English
Pages (from-to)	8263-8267
Number of pages	5
Journal	Thin Solid Films
Volume	515
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2007.02.066
Publication status	Published - 2007 Aug 15

Keywords

Hall measurement
Single crystal
Solution growth
β-FeSi

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{18ba6a4eb95c48608f3b9d3b90041ab6,

title = "Single crystalline β-FeSi2 grown using high-purity FeSi2 source",

abstract = "We have investigated the effect of FeSi2 source purity on the electrical property of β-FeSi2 grown from solution. A high-purity FeSi2 source avoided a contamination of Cu and W metals was synthesized by melting a high-purity Fe (5N) and Si (5N-up) in a quartz ampoule. Glow discharge mass spectrometry revealed that the purity of the FeSi2 source synthesized using 5N-Fe and a quartz-ampoule-melting process is one order of magnitude higher than that of the conventional arc-melted FeSi2 source using 4N-Fe. The β-FeSi2 crystals grown using the high-purity FeSi2 and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi2 showed p-type. The carrier concentration of the n-type crystals was (4.9-6.3) × 1018 cm- 3, which was more than 10 times higher than that of the p-type crystals (5.2 × 1017 cm- 3). From the ICP-MS and SIMS analysis of the grown crystals, we found that dominant impurity concentrations (Cr, Mn, Co, Ni, Cu, Zn and W) in the p-type crystals were higher than those in the n-type ones. Therefore, the p-type conductivity of undoped crystals grown using Zn solvent results from unintentional doping by the high impurity level of the used FeSi2 source.",

keywords = "Hall measurement, Single crystal, Solution growth, β-FeSi",

author = "Kouhei Gotoh and Hirokazu Suzuki and Haruhiko Udono and Isao Kikuma and Fumitaka Esaka and Masahito Uchikoshi and Minoru Isshiki",

note = "Funding Information: This work was partially supported by the Iketani Foundation, the Nippon Sheet Glass Foundation, the Grant-in-Aid for Encouragement of Young Scientists from the Japan Society for the Promotion of Science, and the Industrial Technology research Grant Program from NEDO of Japan.",

year = "2007",

month = aug,

day = "15",

doi = "10.1016/j.tsf.2007.02.066",

language = "English",

volume = "515",

pages = "8263--8267",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "22",

}

TY - JOUR

T1 - Single crystalline β-FeSi2 grown using high-purity FeSi2 source

AU - Gotoh, Kouhei

AU - Suzuki, Hirokazu

AU - Udono, Haruhiko

AU - Kikuma, Isao

AU - Esaka, Fumitaka

AU - Uchikoshi, Masahito

AU - Isshiki, Minoru

N1 - Funding Information: This work was partially supported by the Iketani Foundation, the Nippon Sheet Glass Foundation, the Grant-in-Aid for Encouragement of Young Scientists from the Japan Society for the Promotion of Science, and the Industrial Technology research Grant Program from NEDO of Japan.

PY - 2007/8/15

Y1 - 2007/8/15

N2 - We have investigated the effect of FeSi2 source purity on the electrical property of β-FeSi2 grown from solution. A high-purity FeSi2 source avoided a contamination of Cu and W metals was synthesized by melting a high-purity Fe (5N) and Si (5N-up) in a quartz ampoule. Glow discharge mass spectrometry revealed that the purity of the FeSi2 source synthesized using 5N-Fe and a quartz-ampoule-melting process is one order of magnitude higher than that of the conventional arc-melted FeSi2 source using 4N-Fe. The β-FeSi2 crystals grown using the high-purity FeSi2 and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi2 showed p-type. The carrier concentration of the n-type crystals was (4.9-6.3) × 1018 cm- 3, which was more than 10 times higher than that of the p-type crystals (5.2 × 1017 cm- 3). From the ICP-MS and SIMS analysis of the grown crystals, we found that dominant impurity concentrations (Cr, Mn, Co, Ni, Cu, Zn and W) in the p-type crystals were higher than those in the n-type ones. Therefore, the p-type conductivity of undoped crystals grown using Zn solvent results from unintentional doping by the high impurity level of the used FeSi2 source.

AB - We have investigated the effect of FeSi2 source purity on the electrical property of β-FeSi2 grown from solution. A high-purity FeSi2 source avoided a contamination of Cu and W metals was synthesized by melting a high-purity Fe (5N) and Si (5N-up) in a quartz ampoule. Glow discharge mass spectrometry revealed that the purity of the FeSi2 source synthesized using 5N-Fe and a quartz-ampoule-melting process is one order of magnitude higher than that of the conventional arc-melted FeSi2 source using 4N-Fe. The β-FeSi2 crystals grown using the high-purity FeSi2 and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi2 showed p-type. The carrier concentration of the n-type crystals was (4.9-6.3) × 1018 cm- 3, which was more than 10 times higher than that of the p-type crystals (5.2 × 1017 cm- 3). From the ICP-MS and SIMS analysis of the grown crystals, we found that dominant impurity concentrations (Cr, Mn, Co, Ni, Cu, Zn and W) in the p-type crystals were higher than those in the n-type ones. Therefore, the p-type conductivity of undoped crystals grown using Zn solvent results from unintentional doping by the high impurity level of the used FeSi2 source.

KW - Hall measurement

KW - Single crystal

KW - Solution growth

KW - β-FeSi

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U2 - 10.1016/j.tsf.2007.02.066

DO - 10.1016/j.tsf.2007.02.066

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AN - SCOPUS:34547822901

VL - 515

SP - 8263

EP - 8267

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 22

ER -