Single crystalline β-FeSi2 grown using high-purity FeSi2 source

Kouhei Gotoh, Hirokazu Suzuki, Haruhiko Udono, Isao Kikuma, Fumitaka Esaka, Masahito Uchikoshi, Minoru Isshiki

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have investigated the effect of FeSi2 source purity on the electrical property of β-FeSi2 grown from solution. A high-purity FeSi2 source avoided a contamination of Cu and W metals was synthesized by melting a high-purity Fe (5N) and Si (5N-up) in a quartz ampoule. Glow discharge mass spectrometry revealed that the purity of the FeSi2 source synthesized using 5N-Fe and a quartz-ampoule-melting process is one order of magnitude higher than that of the conventional arc-melted FeSi2 source using 4N-Fe. The β-FeSi2 crystals grown using the high-purity FeSi2 and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi2 showed p-type. The carrier concentration of the n-type crystals was (4.9-6.3) × 1018 cm- 3, which was more than 10 times higher than that of the p-type crystals (5.2 × 1017 cm- 3). From the ICP-MS and SIMS analysis of the grown crystals, we found that dominant impurity concentrations (Cr, Mn, Co, Ni, Cu, Zn and W) in the p-type crystals were higher than those in the n-type ones. Therefore, the p-type conductivity of undoped crystals grown using Zn solvent results from unintentional doping by the high impurity level of the used FeSi2 source.

Original languageEnglish
Pages (from-to)8263-8267
Number of pages5
JournalThin Solid Films
Volume515
Issue number22
DOIs
Publication statusPublished - 2007 Aug 15

Keywords

  • Hall measurement
  • Single crystal
  • Solution growth
  • β-FeSi

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Gotoh, K., Suzuki, H., Udono, H., Kikuma, I., Esaka, F., Uchikoshi, M., & Isshiki, M. (2007). Single crystalline β-FeSi2 grown using high-purity FeSi2 source. Thin Solid Films, 515(22), 8263-8267. https://doi.org/10.1016/j.tsf.2007.02.066