Abstract
We have investigated the effect of FeSi2 source purity on the electrical property of β-FeSi2 grown from solution. A high-purity FeSi2 source avoided a contamination of Cu and W metals was synthesized by melting a high-purity Fe (5N) and Si (5N-up) in a quartz ampoule. Glow discharge mass spectrometry revealed that the purity of the FeSi2 source synthesized using 5N-Fe and a quartz-ampoule-melting process is one order of magnitude higher than that of the conventional arc-melted FeSi2 source using 4N-Fe. The β-FeSi2 crystals grown using the high-purity FeSi2 and Zn solvent showed n-type conduction, whereas those grown using the arc-melted FeSi2 showed p-type. The carrier concentration of the n-type crystals was (4.9-6.3) × 1018 cm- 3, which was more than 10 times higher than that of the p-type crystals (5.2 × 1017 cm- 3). From the ICP-MS and SIMS analysis of the grown crystals, we found that dominant impurity concentrations (Cr, Mn, Co, Ni, Cu, Zn and W) in the p-type crystals were higher than those in the n-type ones. Therefore, the p-type conductivity of undoped crystals grown using Zn solvent results from unintentional doping by the high impurity level of the used FeSi2 source.
Original language | English |
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Pages (from-to) | 8263-8267 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 515 |
Issue number | 22 |
DOIs | |
Publication status | Published - 2007 Aug 15 |
Keywords
- Hall measurement
- Single crystal
- Solution growth
- β-FeSi
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry