Single-crystal growth of Nb films onto molecular beam epitaxy grown (001)InAs

Tatsushi Akazaki, Junsaku Nitta, Hideaki Takayanagi

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15 Citations (Scopus)


Thin Nb films are grown by electron beam evaporation in an ultrahigh vacuum system on molecular beam epitaxy grown (001)InAs epitaxial layers. The Nb on InAs grows as a single-crystalline deposit at a substrate temperature of 200 °C. The orientation relation is (001)Nb//(001)InAs with [110]Nb//[110]InAs, which is different from Nb growth on GaAs. The interface between Nb and InAs features a crystal-disordered layer with a thickness of 1-2 nm, which provides relaxation from lattice mismatch. Critical current measurement of Nb/InAs/Nb junctions shows that the crystal-disordered layer does not affect the superconducting characteristics of the junctions.

Original languageEnglish
Pages (from-to)2037-2039
Number of pages3
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 1991
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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