TY - JOUR
T1 - Single crystal growth of GaN using a Ga melt in Na vapor
AU - Yamada, Takahiro
AU - Yamane, Hisanori
AU - Iwata, Hirokazu
AU - Sarayama, Seiji
N1 - Funding Information:
The authors would like to thank Prof. F.J. Disalvo (Cornell University) for reading the manuscript of this paper. This work was supported in part by Special Coordination Funds from the Ministry of Education, Culture, Sports, Science and Technology.
PY - 2005/8/1
Y1 - 2005/8/1
N2 - GaN single crystals were grown by heating a Ga melt in Na vapor at 720-800 °C and 5 MPa of N2 for 200 h. The Ga melt absorbed Na from the vapor and formed a Na-Ga melt. Transparent prismatic GaN single crystals grew from the wall of a boron nitride crucible in the melt. Seventy five percent of Ga reacted with nitrogen and changed into GaN crystals at 720 °C when the initial amount of a Ga melt was 0.15 g. With a Ga melt of 0.75 g, 11% and 57% of Ga changed into GaN single crystals at 720 °C and at 800 °C, respectively. The rest of the Ga crystallized as a Na-Ga intermetallic compound after cooling. The size of the prismatic GaN single crystals obtained at 800 °C was 1.0-2.5 mm long and 0.3-1.0 mm wide.
AB - GaN single crystals were grown by heating a Ga melt in Na vapor at 720-800 °C and 5 MPa of N2 for 200 h. The Ga melt absorbed Na from the vapor and formed a Na-Ga melt. Transparent prismatic GaN single crystals grew from the wall of a boron nitride crucible in the melt. Seventy five percent of Ga reacted with nitrogen and changed into GaN crystals at 720 °C when the initial amount of a Ga melt was 0.15 g. With a Ga melt of 0.75 g, 11% and 57% of Ga changed into GaN single crystals at 720 °C and at 800 °C, respectively. The rest of the Ga crystallized as a Na-Ga intermetallic compound after cooling. The size of the prismatic GaN single crystals obtained at 800 °C was 1.0-2.5 mm long and 0.3-1.0 mm wide.
KW - A2. Growth from solutions
KW - A2. Single crystal growth
KW - B1. Gallium compounds
KW - B1. Nitrides
KW - B2. Semiconducting III-V materials
UR - http://www.scopus.com/inward/record.url?scp=22144434897&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=22144434897&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2005.04.022
DO - 10.1016/j.jcrysgro.2005.04.022
M3 - Article
AN - SCOPUS:22144434897
VL - 281
SP - 242
EP - 248
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 2-4
ER -