Single crystal growth of GaN using a Ga melt in Na vapor

Takahiro Yamada, Hisanori Yamane, Hirokazu Iwata, Seiji Sarayama

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


GaN single crystals were grown by heating a Ga melt in Na vapor at 720-800 °C and 5 MPa of N2 for 200 h. The Ga melt absorbed Na from the vapor and formed a Na-Ga melt. Transparent prismatic GaN single crystals grew from the wall of a boron nitride crucible in the melt. Seventy five percent of Ga reacted with nitrogen and changed into GaN crystals at 720 °C when the initial amount of a Ga melt was 0.15 g. With a Ga melt of 0.75 g, 11% and 57% of Ga changed into GaN single crystals at 720 °C and at 800 °C, respectively. The rest of the Ga crystallized as a Na-Ga intermetallic compound after cooling. The size of the prismatic GaN single crystals obtained at 800 °C was 1.0-2.5 mm long and 0.3-1.0 mm wide.

Original languageEnglish
Pages (from-to)242-248
Number of pages7
JournalJournal of Crystal Growth
Issue number2-4
Publication statusPublished - 2005 Aug 1


  • A2. Growth from solutions
  • A2. Single crystal growth
  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Single crystal growth of GaN using a Ga melt in Na vapor'. Together they form a unique fingerprint.

Cite this