Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications

Il Hyoung Jung; Yong Ho Kang; Kwang Bo Shim; Akira Yoshikawa; Tsuguo Fukuda; Keun Ho Auh

doi:10.1143/jjap.40.5706

Single crystal growth and characterizations of A₃BC₃D₂O₁₄-type compounds for piezoelectric applications

Il Hyoung Jung, Yong Ho Kang, Kwang Bo Shim, Akira Yoshikawa, Tsuguo Fukuda, Keun Ho Auh

Materials Design Division

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A₃Nb_1-xGa_3+(5/3)xSi₂ O₁₄ (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr₃NbGa₃Si₂O₁₄ (SNGS) and Ca₃NbGa₃Si₂O₁₄ (CNGS) the single crystals showed that they were isostructural to that of A₃BC₃D₂O₁₄, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

Original language	English
Pages (from-to)	5706-5709
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	9 B
DOIs	https://doi.org/10.1143/jjap.40.5706
Publication status	Published - 2001 Sep

Keywords

ANbGaSi O (A = Sr, Ca)
Czochralski
Defect
Micro pulling-down technique
Piezoelectric

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.5706

Cite this

@article{cba6331c03f04712b8914184667a7ce7,

title = "Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications",

abstract = "A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 {\AA}, respectively. The defect distribution and piezoelectric properties of these crystals were measured.",

keywords = "ANbGaSi O (A = Sr, Ca), Czochralski, Defect, Micro pulling-down technique, Piezoelectric",

author = "Jung, {Il Hyoung} and Kang, {Yong Ho} and Shim, {Kwang Bo} and Akira Yoshikawa and Tsuguo Fukuda and Auh, {Keun Ho}",

year = "2001",

month = sep,

doi = "10.1143/jjap.40.5706",

language = "English",

volume = "40",

pages = "5706--5709",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 B",

}

TY - JOUR

T1 - Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications

AU - Jung, Il Hyoung

AU - Kang, Yong Ho

AU - Shim, Kwang Bo

AU - Yoshikawa, Akira

AU - Fukuda, Tsuguo

AU - Auh, Keun Ho

PY - 2001/9

Y1 - 2001/9

N2 - A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

AB - A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

KW - ANbGaSi O (A = Sr, Ca)

KW - Czochralski

KW - Defect

KW - Micro pulling-down technique

KW - Piezoelectric

UR - http://www.scopus.com/inward/record.url?scp=0035455566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035455566&partnerID=8YFLogxK

U2 - 10.1143/jjap.40.5706

DO - 10.1143/jjap.40.5706

M3 - Article

AN - SCOPUS:0035455566

VL - 40

SP - 5706

EP - 5709

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 B

ER -