Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications

Il Hyoung Jung; Yong Ho Kang; Kwang Bo Shim; Akira Yoshikawa; Tsuguo Fukuda; Keun Ho Auh

Single crystal growth and characterizations of A₃BC₃D₂O₁₄-type compounds for piezoelectric applications

Il Hyoung Jung, Yong Ho Kang, Kwang Bo Shim, Akira Yoshikawa, Tsuguo Fukuda, Keun Ho Auh

Materials Property Division

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

A₃Nb_1-xGa_3+(5/3)xSi₂ O₁₄ (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr₃NbGa₃Si₂O₁₄ (SNGS) and Ca₃NbGa₃Si₂O₁₄ (CNGS) the single crystals showed that they were isostructural to that of A₃BC₃D₂O₁₄, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

Original language	English
Pages (from-to)	5706-5709
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	9 B
Publication status	Published - 2001 Sep 1

Keywords

ANbGaSi O (A = Sr, Ca)
Czochralski
Defect
Micro pulling-down technique
Piezoelectric

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Single crystal growth and characterizations of A₃BC₃D₂O₁₄-type compounds for piezoelectric applications. / Jung, Il Hyoung; Kang, Yong Ho; Shim, Kwang Bo; Yoshikawa, Akira; Fukuda, Tsuguo; Auh, Keun Ho.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 9 B, 01.09.2001, p. 5706-5709.

Research output: Contribution to journal › Article › peer-review

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title = "Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications",

abstract = "A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 {\AA}, respectively. The defect distribution and piezoelectric properties of these crystals were measured.",

keywords = "ANbGaSi O (A = Sr, Ca), Czochralski, Defect, Micro pulling-down technique, Piezoelectric",

author = "Jung, {Il Hyoung} and Kang, {Yong Ho} and Shim, {Kwang Bo} and Akira Yoshikawa and Tsuguo Fukuda and Auh, {Keun Ho}",

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AU - Jung, Il Hyoung

AU - Kang, Yong Ho

AU - Shim, Kwang Bo

AU - Yoshikawa, Akira

AU - Fukuda, Tsuguo

AU - Auh, Keun Ho

PY - 2001/9/1

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N2 - A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

AB - A3Nb1-xGa3+(5/3)xSi2 O14 (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown using the micro pulling-down (μ-PD) technique after being prepared by the conventional solid-state reaction. On the basis of the μ-PD growth results, ANGS single crystals were grown by the Czochralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A3BC3D2O14, which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Å, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

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