Single-crystal field-effect transistors based on organic selenium-containing semiconductor

Roswitha Zeis; Christian Kloc; Kazuo Takimiya; Yoshihito Kunugi; Yasushi Konda; Naoto Niihara; Tetsuo Otsubo

doi:10.1143/JJAP.44.3712

Single-crystal field-effect transistors based on organic selenium-containing semiconductor

Roswitha Zeis, Christian Kloc, Kazuo Takimiya, Yoshihito Kunugi, Yasushi Konda, Naoto Niihara, Tetsuo Otsubo

Research output: Contribution to journal › Article

21 Citations (Scopus)

Abstract

We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm²/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.

Original language	English
Pages (from-to)	3712-3714
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.44.3712
Publication status	Published - 2005 Jun 1
Externally published	Yes

Keywords

Field effect transistor
Mobility
Organic semiconductor
Organic single crystal

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Zeis, R., Kloc, C., Takimiya, K., Kunugi, Y., Konda, Y., Niihara, N., & Otsubo, T. (2005). Single-crystal field-effect transistors based on organic selenium-containing semiconductor. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(6 A), 3712-3714. https://doi.org/10.1143/JJAP.44.3712

Single-crystal field-effect transistors based on organic selenium-containing semiconductor. / Zeis, Roswitha; Kloc, Christian; Takimiya, Kazuo; Kunugi, Yoshihito; Konda, Yasushi; Niihara, Naoto; Otsubo, Tetsuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 6 A, 01.06.2005, p. 3712-3714.

Research output: Contribution to journal › Article

@article{9d81f875a08a4686b03214f8a8a58ad9,

title = "Single-crystal field-effect transistors based on organic selenium-containing semiconductor",

abstract = "We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.",

keywords = "Field effect transistor, Mobility, Organic semiconductor, Organic single crystal",

author = "Roswitha Zeis and Christian Kloc and Kazuo Takimiya and Yoshihito Kunugi and Yasushi Konda and Naoto Niihara and Tetsuo Otsubo",

year = "2005",

month = jun,

day = "1",

doi = "10.1143/JJAP.44.3712",

language = "English",

volume = "44",

pages = "3712--3714",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 A",

}

TY - JOUR

T1 - Single-crystal field-effect transistors based on organic selenium-containing semiconductor

AU - Zeis, Roswitha

AU - Kloc, Christian

AU - Takimiya, Kazuo

AU - Kunugi, Yoshihito

AU - Konda, Yasushi

AU - Niihara, Naoto

AU - Otsubo, Tetsuo

PY - 2005/6/1

Y1 - 2005/6/1

N2 - We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.

AB - We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.

KW - Field effect transistor

KW - Mobility

KW - Organic semiconductor

KW - Organic single crystal

UR - http://www.scopus.com/inward/record.url?scp=23944467479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23944467479&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.3712

DO - 10.1143/JJAP.44.3712

M3 - Article

AN - SCOPUS:23944467479

VL - 44

SP - 3712

EP - 3714

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 A

ER -