TY - JOUR
T1 - Single-crystal field-effect transistors based on organic selenium-containing semiconductor
AU - Zeis, Roswitha
AU - Kloc, Christian
AU - Takimiya, Kazuo
AU - Kunugi, Yoshihito
AU - Konda, Yasushi
AU - Niihara, Naoto
AU - Otsubo, Tetsuo
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/6
Y1 - 2005/6
N2 - We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.
AB - We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.
KW - Field effect transistor
KW - Mobility
KW - Organic semiconductor
KW - Organic single crystal
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U2 - 10.1143/JJAP.44.3712
DO - 10.1143/JJAP.44.3712
M3 - Article
AN - SCOPUS:23944467479
VL - 44
SP - 3712
EP - 3714
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 A
ER -