Single-crystal field-effect transistors based on organic selenium-containing semiconductor

Roswitha Zeis; Christian Kloc; Kazuo Takimiya; Yoshihito Kunugi; Yasushi Konda; Naoto Niihara; Tetsuo Otsubo

doi:10.1143/JJAP.44.3712

Single-crystal field-effect transistors based on organic selenium-containing semiconductor

Roswitha Zeis, Christian Kloc, Kazuo Takimiya, Yoshihito Kunugi, Yasushi Konda, Naoto Niihara, Tetsuo Otsubo

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm²/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.

Original language	English
Pages (from-to)	3712-3714
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.44.3712
Publication status	Published - 2005 Jun

Keywords

Field effect transistor
Mobility
Organic semiconductor
Organic single crystal

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Single-crystal field-effect transistors based on organic selenium-containing semiconductor. / Zeis, Roswitha; Kloc, Christian; Takimiya, Kazuo; Kunugi, Yoshihito; Konda, Yasushi; Niihara, Naoto; Otsubo, Tetsuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 6 A, 06.2005, p. 3712-3714.

Research output: Contribution to journal › Article › peer-review

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abstract = "We report on the fabrication and characterization of single-crystal field-effect transistors (FETs) based on 2,6-diphenylbenzo[1,2-b:4,5-b′]diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7 V and charge carrier mobility is nearly gate bias independent, ranging from 1 to 1.5 cm2/(V s) depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.",

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AU - Niihara, Naoto

AU - Otsubo, Tetsuo

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