Single atom imaging-dopant atoms in silicon-based semiconductor devices- by atom probe tomography

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The application of atom probe tomography (APT) to observe dopant atoms in silicon-based semiconductor devices is discussed. APT is a promising tool, capable of detecting a low number of dopant atoms, and should prove useful in the further downsizing of devices. The current state of the technique and its future prospects are discussed.

Original languageEnglish
Title of host publicationSingle-Atom Nanoelectronics
PublisherPan Stanford Publishing Pte. Ltd.
Pages151-186
Number of pages36
ISBN (Print)9789814316316
DOIs
Publication statusPublished - 2013 Apr 30

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Engineering(all)

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