Abstract
We report on growth and characterizations of Si/multicrystalline-SiGe (mc-SiGe) heterostructure as a promising candidate to surpass multicrystalline-Si solar cells. A 0.5 μm-thick Si thin film was grown on mc-SiGe using a solid-source molecular beam epitaxy system. Spatial distribution of the status of strain in Si was found to be strongly dependent on the composition and microstructure of underlying mc-SiGe. Large strain distribution and partial strain relaxation were revealed in Si on mc-SiGe with average Ge composition of 0.72. On the other hand, almost uniformly strained-Si film was grown on Mc-SiGe with average Ge composition of 0.30. To avoid introduction of recombination centers at the Si/SiGe interface, it is necessary to avoid strain relaxation by decreasing average Ge composition in mc-SiGe.
| Original language | English |
|---|---|
| Pages (from-to) | 247-249 |
| Number of pages | 3 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Publication status | Published - 2002 Dec 1 |
| Event | 29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 2002 May 19 → 2002 May 24 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering