Abstract
The tense thin-film torsion bar of polycrystalline (poly-) Si has been recently introduced into a micromirror. A tensile stress is obtained by the crystallization of amorphous Si. The poly-Si has almost the same coefficient of thermal expansion as that of Si substrate. An electrical connection is obtained with doping without the use of metal overlayer. The thin-film torsion bar of poly-Si is fabricated with a revised process so as to protect against the crystalline Si etching. Considering the earlier advantages and techniques, the stabilized temperature characteristics and the low-voltage driving are simultaneously realized.
| Original language | English |
|---|---|
| Article number | 5263014 |
| Pages (from-to) | 1455-1462 |
| Number of pages | 8 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 15 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2009 Sep 1 |
Keywords
- Crystallization-induced stress
- Low-voltage driving
- Micromirror
- Temperature characteristics
- Thin-film torsion bar
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Cite this
Sasaki, M., Fujishima, M., Hane, K., & Miura, H. (2009). Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si. IEEE Journal on Selected Topics in Quantum Electronics, 15(5), 1455-1462. [5263014]. https://doi.org/10.1109/JSTQE.2009.2022281