Abstract
The tense thin-film torsion bar of polycrystalline (poly-) Si has been recently introduced into a micromirror. A tensile stress is obtained by the crystallization of amorphous Si. The poly-Si has almost the same coefficient of thermal expansion as that of Si substrate. An electrical connection is obtained with doping without the use of metal overlayer. The thin-film torsion bar of poly-Si is fabricated with a revised process so as to protect against the crystalline Si etching. Considering the earlier advantages and techniques, the stabilized temperature characteristics and the low-voltage driving are simultaneously realized.
Original language | English |
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Article number | 5263014 |
Pages (from-to) | 1455-1462 |
Number of pages | 8 |
Journal | IEEE Journal on Selected Topics in Quantum Electronics |
Volume | 15 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2009 Sep |
Keywords
- Crystallization-induced stress
- Low-voltage driving
- Micromirror
- Temperature characteristics
- Thin-film torsion bar
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering