Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si

Minoru Sasaki; Masayuki Fujishima; Kazuhiro Hane; Hideo Miura

doi:10.1109/JSTQE.2009.2022281

Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si

Minoru Sasaki, Masayuki Fujishima, Kazuhiro Hane, Hideo Miura

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The tense thin-film torsion bar of polycrystalline (poly-) Si has been recently introduced into a micromirror. A tensile stress is obtained by the crystallization of amorphous Si. The poly-Si has almost the same coefficient of thermal expansion as that of Si substrate. An electrical connection is obtained with doping without the use of metal overlayer. The thin-film torsion bar of poly-Si is fabricated with a revised process so as to protect against the crystalline Si etching. Considering the earlier advantages and techniques, the stabilized temperature characteristics and the low-voltage driving are simultaneously realized.

Original language	English
Article number	5263014
Pages (from-to)	1455-1462
Number of pages	8
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	15
Issue number	5
DOIs	https://doi.org/10.1109/JSTQE.2009.2022281
Publication status	Published - 2009 Sep

Keywords

Crystallization-induced stress
Low-voltage driving
Micromirror
Temperature characteristics
Thin-film torsion bar

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si. / Sasaki, Minoru; Fujishima, Masayuki; Hane, Kazuhiro ; Miura, Hideo.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 15, No. 5, 5263014, 09.2009, p. 1455-1462.

Research output: Contribution to journal › Article › peer-review

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title = "Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si",

abstract = "The tense thin-film torsion bar of polycrystalline (poly-) Si has been recently introduced into a micromirror. A tensile stress is obtained by the crystallization of amorphous Si. The poly-Si has almost the same coefficient of thermal expansion as that of Si substrate. An electrical connection is obtained with doping without the use of metal overlayer. The thin-film torsion bar of poly-Si is fabricated with a revised process so as to protect against the crystalline Si etching. Considering the earlier advantages and techniques, the stabilized temperature characteristics and the low-voltage driving are simultaneously realized.",

keywords = "Crystallization-induced stress, Low-voltage driving, Micromirror, Temperature characteristics, Thin-film torsion bar",

author = "Minoru Sasaki and Masayuki Fujishima and Kazuhiro Hane and Hideo Miura",

note = "Funding Information: Manuscript received January 6, 2009; revised April 21, 2009. Current version published October 7, 2009. This work was supported in part by the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) Grant-in-Aid for Scientific Research on Priority Areas (19016003) and in part by the MEXT Support Program for Forming Strategic Research Infrastructure from 2008.",

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AU - Hane, Kazuhiro

AU - Miura, Hideo

N1 - Funding Information: Manuscript received January 6, 2009; revised April 21, 2009. Current version published October 7, 2009. This work was supported in part by the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) Grant-in-Aid for Scientific Research on Priority Areas (19016003) and in part by the MEXT Support Program for Forming Strategic Research Infrastructure from 2008.

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AB - The tense thin-film torsion bar of polycrystalline (poly-) Si has been recently introduced into a micromirror. A tensile stress is obtained by the crystallization of amorphous Si. The poly-Si has almost the same coefficient of thermal expansion as that of Si substrate. An electrical connection is obtained with doping without the use of metal overlayer. The thin-film torsion bar of poly-Si is fabricated with a revised process so as to protect against the crystalline Si etching. Considering the earlier advantages and techniques, the stabilized temperature characteristics and the low-voltage driving are simultaneously realized.

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Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si

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Keywords

ASJC Scopus subject areas

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