Simultaneous realization of stabilized temperature characteristics and low-voltage driving of a micromirror using the thin-film torsion bar of tensile poly-Si

Minoru Sasaki, Masayuki Fujishima, Kazuhiro Hane, Hideo Miura

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The tense thin-film torsion bar of polycrystalline (poly-) Si has been recently introduced into a micromirror. A tensile stress is obtained by the crystallization of amorphous Si. The poly-Si has almost the same coefficient of thermal expansion as that of Si substrate. An electrical connection is obtained with doping without the use of metal overlayer. The thin-film torsion bar of poly-Si is fabricated with a revised process so as to protect against the crystalline Si etching. Considering the earlier advantages and techniques, the stabilized temperature characteristics and the low-voltage driving are simultaneously realized.

Original languageEnglish
Article number5263014
Pages (from-to)1455-1462
Number of pages8
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number5
DOIs
Publication statusPublished - 2009 Sep 1

Keywords

  • Crystallization-induced stress
  • Low-voltage driving
  • Micromirror
  • Temperature characteristics
  • Thin-film torsion bar

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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