Recently, we have developed Non-Contact Scanning Nonlinear Dielectric Microscopy (NC-SNDM) with a new height-control technique utilizing higher order nonlinear dielectric constant detection (e(4) signal). In theoretically, NC-SNDM has quite high height sensitivity against the gap between tip and sample as well as STM technique and the simultaneous observation of the topography and ferroelectric polarization (local dipole moment) distribution with atomic resolution has been expected. To confirm such performance of NC-SNDM with atomic resolution, UHV-SNDM was developed and Si(111) cleaned surface was chosen as a specimen. As a result, we have succeeded in observing Si(111) 7×7 atomic structure. Moreover, distribution of tunneling current and lowest order nonlinear dielectric signal ε(3) could be observed simultaneously. To the best our knowledge, this is the first successful demonstration of the atomic resolution achievement in dielectric microscopy techniques.