Simultaneous observation of SiO2 surface and SiO2/Si interface using self-assembled-monolayer island

Tadahiro Komeda; Kenji Namba; Yasushiro Nishioka

doi:10.1143/JJAP.37.L214

Simultaneous observation of SiO₂ surface and SiO₂/Si interface using self-assembled-monolayer island

Tadahiro Komeda, Kenji Namba, Yasushiro Nishioka

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Steps on SiO₂ surface and in SiO₂/Si interface, which remain on the surface after the formation of SiO₂ on atomically flat Si(111) surface, are simultaneously observed with a novel use of self-assembled-monolayer (SAM) islands. After the formation of octadecyltrichlorosilane (OTS) SAM islands on SiO₂, SiO₂ layers in the area which are not covered by OTS-SAM are completely removed by hydrofluoric acid (HF) to expose SiO₂/Si interface, followed by atomic-force-microscopy (AFM) observation. OTS-SAM islands trace the morphology of SiO₂ surface underneath, whose structure is preserved even after being dipped into HF. The results indicate that the steps on SiO₂ and in the interface of SiO₂/Si show no lateral shift, which suggests no step-flow during oxidation for stress relief.

Original language	English
Pages (from-to)	L214-L217
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	37
Issue number	2 SUPPL. B
DOIs	https://doi.org/10.1143/JJAP.37.L214
Publication status	Published - 1998 Feb 15
Externally published	Yes

Keywords

AFM
OTS
SAM
Si oxidation
Si surface
SiO
Step-flow
Steps

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.37.L214

Cite this

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title = "Simultaneous observation of SiO2 surface and SiO2/Si interface using self-assembled-monolayer island",

abstract = "Steps on SiO2 surface and in SiO2/Si interface, which remain on the surface after the formation of SiO2 on atomically flat Si(111) surface, are simultaneously observed with a novel use of self-assembled-monolayer (SAM) islands. After the formation of octadecyltrichlorosilane (OTS) SAM islands on SiO2, SiO2 layers in the area which are not covered by OTS-SAM are completely removed by hydrofluoric acid (HF) to expose SiO2/Si interface, followed by atomic-force-microscopy (AFM) observation. OTS-SAM islands trace the morphology of SiO2 surface underneath, whose structure is preserved even after being dipped into HF. The results indicate that the steps on SiO2 and in the interface of SiO2/Si show no lateral shift, which suggests no step-flow during oxidation for stress relief.",

keywords = "AFM, OTS, SAM, Si oxidation, Si surface, SiO, Step-flow, Steps",

author = "Tadahiro Komeda and Kenji Namba and Yasushiro Nishioka",

year = "1998",

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day = "15",

doi = "10.1143/JJAP.37.L214",

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TY - JOUR

T1 - Simultaneous observation of SiO2 surface and SiO2/Si interface using self-assembled-monolayer island

AU - Komeda, Tadahiro

AU - Namba, Kenji

AU - Nishioka, Yasushiro

PY - 1998/2/15

Y1 - 1998/2/15

N2 - Steps on SiO2 surface and in SiO2/Si interface, which remain on the surface after the formation of SiO2 on atomically flat Si(111) surface, are simultaneously observed with a novel use of self-assembled-monolayer (SAM) islands. After the formation of octadecyltrichlorosilane (OTS) SAM islands on SiO2, SiO2 layers in the area which are not covered by OTS-SAM are completely removed by hydrofluoric acid (HF) to expose SiO2/Si interface, followed by atomic-force-microscopy (AFM) observation. OTS-SAM islands trace the morphology of SiO2 surface underneath, whose structure is preserved even after being dipped into HF. The results indicate that the steps on SiO2 and in the interface of SiO2/Si show no lateral shift, which suggests no step-flow during oxidation for stress relief.

AB - Steps on SiO2 surface and in SiO2/Si interface, which remain on the surface after the formation of SiO2 on atomically flat Si(111) surface, are simultaneously observed with a novel use of self-assembled-monolayer (SAM) islands. After the formation of octadecyltrichlorosilane (OTS) SAM islands on SiO2, SiO2 layers in the area which are not covered by OTS-SAM are completely removed by hydrofluoric acid (HF) to expose SiO2/Si interface, followed by atomic-force-microscopy (AFM) observation. OTS-SAM islands trace the morphology of SiO2 surface underneath, whose structure is preserved even after being dipped into HF. The results indicate that the steps on SiO2 and in the interface of SiO2/Si show no lateral shift, which suggests no step-flow during oxidation for stress relief.

KW - AFM

KW - OTS

KW - SAM

KW - Si oxidation

KW - Si surface

KW - SiO

KW - Step-flow

KW - Steps

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