Simultaneous formation of p- And n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system

S. Tsukimoto, T. Sakai, T. Onishi, Kazuhiro Ito, Masanori Murakami

    Research output: Contribution to journalReview articlepeer-review

    25 Citations (Scopus)


    Fabrication procedures for silicon carbide power metal oxide semiconductor field effect transistors (MOSFETs) can be improved through simultaneous formation (i.e., same contact materials and one step annealing) of ohmic contacts on both the p-well and n-source regions. We have succeeded with the simultaneous formation of the ohmic contacts for p- and n-type SiC semiconductors by examining ternary Ni/Ti/Al materials with various compositions, where a slash symbol "/" indicates the deposition sequence starting with Ni. The Ni(20 nm)/Ti(50 nm)/Al(50 nm) combination provided specific contact resistances of 2 × 10-3 Ω-cm2 and 2 × 10-4 Ω-cm2 for p- and n-type SiC, respectively, after annealing at 800°C for 30 min, where the doping level of Al in the SiC substrate was 4.5 × 1018 cm-3 and the level of N was 1.0 × 1019 cm -3.

    Original languageEnglish
    Pages (from-to)1310-1312
    Number of pages3
    JournalJournal of Electronic Materials
    Issue number10
    Publication statusPublished - 2005 Oct


    • 4H-SiC
    • Ni/Ti/Al
    • Ohmic contact
    • Simultaneous formation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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