Simultaneous formation of a metallic Mn layer and a MnOx / MnSixOy barrier layer by chemical vapor deposition at 250°C

A. Kurokawa, Y. Sutou, J. Koike, T. Hamada, K. Matsumoto, H. Nagai, K. Maekawa, H. Kanato

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Deposition behavior and properties of MP-21 was investigated. 1. Metallic Mn was deposited at T > 230°C. 2. A thin Mn oxide layer was formed at the Mn/SiO2 interface. 3. The thin layer showed a good diffusion barrier property after annealing at 400°C for 10 h. 4. A part of the Mn oxide layer was embedded in the dielectric layer. 5. The metallic Mn layer on the Mn oxide barrier layer is expected to have additional functions such as an adhesion promoter with Cu, a seed layer for Cu plating, a stuffing element at a cap/Cu interface.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2012
Number of pages9
Publication statusPublished - 2012 Dec 1
EventAdvanced Metallization Conference 2012 - Albany, NY, United States
Duration: 2012 Oct 92012 Oct 11

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766


OtherAdvanced Metallization Conference 2012
Country/TerritoryUnited States
CityAlbany, NY

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering


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