Simultaneous formation of a metallic Mn layer and a MnOx/ MnSixOy barrier layer by chemical vapor deposition at 250°C

Atsuko Kurokawa, Yuji Sutou, Junichi Koike, Tatsufumi Hamada, Kenji Matsumoto, Hiroyuki Nagai, Kaoru Maekawa, Hiroki Kanato

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9 Citations (Scopus)


A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)-SiO2 substrate at the deposition temperature of 250 °C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-(tert-butylamide)-2-dimethylaminoethane-N,N0]manganese. A thin and uniform Mn oxide layer was simultaneously formed at a CVD-Mn/TEOS-SiO2 interface, and was partially embedded in the TEOS-SiO2. This Mn oxide layer was composed of a bilayer of MnOx and MnSixOy . After annealing at 400 °C in vacuum for 10 h, the interface Mn oxide layer showed a good barrier property and thermal stability.

Original languageEnglish
Article number05FA02
JournalJapanese journal of applied physics
Issue number5 PART 4
Publication statusPublished - 2013 May

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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