Simultaneous determination of activity coefficient and diffusion coefficient of boron in single crystalline silicon

Hiroyuki Fukuyama; Jun Takasago; Kyoko Kawagishi; Masahiro Susa; Kazuhiro Nagata

doi:10.1149/1.1393467

Simultaneous determination of activity coefficient and diffusion coefficient of boron in single crystalline silicon

Hiroyuki Fukuyama, Jun Takasago, Kyoko Kawagishi, Masahiro Susa, Kazuhiro Nagata

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, the activity coefficient in single crystalline silicon was determined by a gas-solid equilibrium reaction between controlled boron vapor and silicon surface. The different coefficient of boron in silicon was simultaneously determined from the concentration profile of boron. Based on the results, the standard Gibbs energy of formation of SiB₃(s) was determined.

Original language	English
Pages (from-to)	1965-1969
Number of pages	5
Journal	Journal of the Electrochemical Society
Volume	147
Issue number	5
DOIs	https://doi.org/10.1149/1.1393467
Publication status	Published - 2000 May 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.1393467

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abstract = "In this study, the activity coefficient in single crystalline silicon was determined by a gas-solid equilibrium reaction between controlled boron vapor and silicon surface. The different coefficient of boron in silicon was simultaneously determined from the concentration profile of boron. Based on the results, the standard Gibbs energy of formation of SiB3(s) was determined.",

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AU - Fukuyama, Hiroyuki

AU - Takasago, Jun

AU - Kawagishi, Kyoko

AU - Susa, Masahiro

AU - Nagata, Kazuhiro

PY - 2000/5/1

Y1 - 2000/5/1

N2 - In this study, the activity coefficient in single crystalline silicon was determined by a gas-solid equilibrium reaction between controlled boron vapor and silicon surface. The different coefficient of boron in silicon was simultaneously determined from the concentration profile of boron. Based on the results, the standard Gibbs energy of formation of SiB3(s) was determined.

AB - In this study, the activity coefficient in single crystalline silicon was determined by a gas-solid equilibrium reaction between controlled boron vapor and silicon surface. The different coefficient of boron in silicon was simultaneously determined from the concentration profile of boron. Based on the results, the standard Gibbs energy of formation of SiB3(s) was determined.

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Simultaneous determination of activity coefficient and diffusion coefficient of boron in single crystalline silicon

Abstract

ASJC Scopus subject areas

UN SDGs

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