Simultaneous determination of activity coefficient and diffusion coefficient of boron in single crystalline silicon

Hiroyuki Fukuyama, Jun Takasago, Kyoko Kawagishi, Masahiro Susa, Kazuhiro Nagata

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, the activity coefficient in single crystalline silicon was determined by a gas-solid equilibrium reaction between controlled boron vapor and silicon surface. The different coefficient of boron in silicon was simultaneously determined from the concentration profile of boron. Based on the results, the standard Gibbs energy of formation of SiB3(s) was determined.

Original languageEnglish
Pages (from-to)1965-1969
Number of pages5
JournalJournal of the Electrochemical Society
Volume147
Issue number5
DOIs
Publication statusPublished - 2000 May 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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