In this study, the activity coefficient in single crystalline silicon was determined by a gas-solid equilibrium reaction between controlled boron vapor and silicon surface. The different coefficient of boron in silicon was simultaneously determined from the concentration profile of boron. Based on the results, the standard Gibbs energy of formation of SiB3(s) was determined.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry