TY - JOUR
T1 - Simulation study of type-II Ge/Si quantum dot for solar cell applications
AU - Hu, Weiguo
AU - Maksudur Rahman, Mohammad
AU - Lee, Ming Yi
AU - Li, Yiming
AU - Samukawa, Seiji
N1 - Funding Information:
In this work, M.-Y. Lee and Y. Li were also supported in part by the Taiwan National Science Council (NSC) under Contract No. NSC-101-2221-E-009-092.
PY - 2013/9/28
Y1 - 2013/9/28
N2 - The electronic structure, miniband formation conditions, and required process parameters of type-II Ge/Si quantum dots are calculated using a 3D finite element method. We further estimate the device conversion efficiency and optimize the appropriate operation conditions. By using the crystalline silicon as the matrix, the explored intermediate band solar cell (IBSC) may not be suitable for 1 sun application, but it is a great value under concentration application. By considering an appropriate H-passivation treatment on amorphous silicon, the type II Ge/Si IBSC can achieve 44.0% conversion efficiency under 1 sun application.
AB - The electronic structure, miniband formation conditions, and required process parameters of type-II Ge/Si quantum dots are calculated using a 3D finite element method. We further estimate the device conversion efficiency and optimize the appropriate operation conditions. By using the crystalline silicon as the matrix, the explored intermediate band solar cell (IBSC) may not be suitable for 1 sun application, but it is a great value under concentration application. By considering an appropriate H-passivation treatment on amorphous silicon, the type II Ge/Si IBSC can achieve 44.0% conversion efficiency under 1 sun application.
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U2 - 10.1063/1.4821114
DO - 10.1063/1.4821114
M3 - Article
AN - SCOPUS:84885393801
VL - 114
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 12
M1 - 124509
ER -