Simulation study of SiH4 microdischarges in a narrow channel

L. Z. Tong, Shigeru Yonemura, Hidemasa Takana, Hideya Nishiyama

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Abstract

Using the Particle-in-Cell/Monte Carlo (PIC/MC) method, the behavior of SiH4 plasma discharge in a narrow channel was studied. Simulations were carried out at a gas pressure of 5 Torr for an electrode distance of 20 mm and a narrow channel with an inner diameter of 2 mm. Most SiH2 + ions were found to be changed into SiH3+ ions due to SiH2+-SiH4 collisional charge exchange. The dominant charged species in the discharge were electrons and SiH 3+ ions. The inner surface of the narrow channel greatly affected SiH4 plasma behavior due to an accumulation of charged particles. An intense ionization rate was found for the first time in the sheath on the inner surface of the narrow channel. The largest electron and SiH 3+ ion densities appeared at the edge of the plasma bulk abutting the sheath on the inner surface of the narrow channel.

Original languageEnglish
Article number45003
JournalEPL
Volume77
Issue number4
DOIs
Publication statusPublished - 2007 Feb 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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