Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications

Yi Chia Tsai; Ming Yi Lee; Yiming Li; Mohammad Maksudur Rahman; Seiji Samukawa

doi:10.1109/LED.2016.2561205

Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications

Yi Chia Tsai, Ming Yi Lee, Yiming Li, Mohammad Maksudur Rahman, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This letter presents a computational study on the band profile of Si/SiC quantum dot (QD) superlattice for solar cell devices and the theoretical conversion efficiency. We find that both the miniband energy of QD superlattice and the conversion efficiency of QD solar cell highly correlate to the space among layers and the number of layers. When the distance between layers is >2 nm, the impact of the number of layers on the tunable ground-state energy bandwidth is weakened. The conversion efficiency increases as the layer distance decreases; however, when the number of layers is greater than 4, the increasing rate of conversion efficiency declines.

Original language	English
Article number	7463544
Pages (from-to)	758-761
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	6
DOIs	https://doi.org/10.1109/LED.2016.2561205
Publication status	Published - 2016 Jun

Keywords

Conversion efficiency.
Layer distance
Miniband
Multilayer
Si/SiC Quantum dot
Solar cell
Superlattice

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2016.2561205

Fingerprint Dive into the research topics of 'Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications'. Together they form a unique fingerprint.

Cite this

@article{9fe8c27a4a5342f5828367a0c16fcb80,

title = "Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications",

abstract = "This letter presents a computational study on the band profile of Si/SiC quantum dot (QD) superlattice for solar cell devices and the theoretical conversion efficiency. We find that both the miniband energy of QD superlattice and the conversion efficiency of QD solar cell highly correlate to the space among layers and the number of layers. When the distance between layers is >2 nm, the impact of the number of layers on the tunable ground-state energy bandwidth is weakened. The conversion efficiency increases as the layer distance decreases; however, when the number of layers is greater than 4, the increasing rate of conversion efficiency declines.",

keywords = "Conversion efficiency., Layer distance, Miniband, Multilayer, Si/SiC Quantum dot, Solar cell, Superlattice",

author = "Tsai, {Yi Chia} and Lee, {Ming Yi} and Yiming Li and Rahman, {Mohammad Maksudur} and Seiji Samukawa",

year = "2016",

month = jun,

doi = "10.1109/LED.2016.2561205",

language = "English",

volume = "37",

pages = "758--761",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Simulation Study of Multilayer Si/SiC Quantum Dot Superlattice for Solar Cell Applications

AU - Tsai, Yi Chia

AU - Lee, Ming Yi

AU - Li, Yiming

AU - Rahman, Mohammad Maksudur

AU - Samukawa, Seiji

PY - 2016/6

Y1 - 2016/6

N2 - This letter presents a computational study on the band profile of Si/SiC quantum dot (QD) superlattice for solar cell devices and the theoretical conversion efficiency. We find that both the miniband energy of QD superlattice and the conversion efficiency of QD solar cell highly correlate to the space among layers and the number of layers. When the distance between layers is >2 nm, the impact of the number of layers on the tunable ground-state energy bandwidth is weakened. The conversion efficiency increases as the layer distance decreases; however, when the number of layers is greater than 4, the increasing rate of conversion efficiency declines.

AB - This letter presents a computational study on the band profile of Si/SiC quantum dot (QD) superlattice for solar cell devices and the theoretical conversion efficiency. We find that both the miniband energy of QD superlattice and the conversion efficiency of QD solar cell highly correlate to the space among layers and the number of layers. When the distance between layers is >2 nm, the impact of the number of layers on the tunable ground-state energy bandwidth is weakened. The conversion efficiency increases as the layer distance decreases; however, when the number of layers is greater than 4, the increasing rate of conversion efficiency declines.

KW - Conversion efficiency.

KW - Layer distance

KW - Miniband

KW - Multilayer

KW - Si/SiC Quantum dot

KW - Solar cell

KW - Superlattice

UR - http://www.scopus.com/inward/record.url?scp=84971529409&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971529409&partnerID=8YFLogxK

U2 - 10.1109/LED.2016.2561205

DO - 10.1109/LED.2016.2561205

M3 - Article

AN - SCOPUS:84971529409

VL - 37

SP - 758

EP - 761

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

M1 - 7463544

ER -