Simulation study for HTCVD of SiC using first-principles calculation and thermo-fluid analysis

Yasuo Kitou, Emi Makino, Kenji Inaba, Norikazu Hosokawa, Hidehiko Hiramatsu, Jun Hasegawa, Shoichi Onda, Hideyuki Tsuboi, Hiromitsu Takaba, Akira Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A simulation study for high temperature chemical vapor deposition (HTCVD) of silicon carbide (SiC) is presented. Thermodynamic properties of the species were derived from the first-principles calculations in order to evaluate the activation energy (Ea) in the gas phase reaction. Pathways producing SiC2 and Si2C from SiCl4-C3H 8-H2 system were proposed to investigate the effect of chlorinated species on HTCVD. A thermo-fluid analysis was carried out to estimate the partial pressures of the species. It was found that the main sublimed species of Si, SiC2, Si2C decreased in the SiCl4-C3H8-H2 system compared to the SiH4-C3H8-H2 system. This suggests that the growth rate would decrease in the atmosphere of chlorinated species at around 2500°C.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsAkira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
PublisherTrans Tech Publications Ltd
Pages47-50
Number of pages4
ISBN (Print)9780878493579
DOIs
Publication statusPublished - 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: 2007 Oct 142007 Oct 19

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period07/10/1407/10/19

Keywords

  • Activation energy
  • Bulk growth
  • Chlorinated species
  • First-principles calculation
  • Free energy
  • Frequency factor
  • Gas phase reaction
  • Growth rate
  • HTCVD
  • Thermo-fluid analysis

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Simulation study for HTCVD of SiC using first-principles calculation and thermo-fluid analysis'. Together they form a unique fingerprint.

  • Cite this

    Kitou, Y., Makino, E., Inaba, K., Hosokawa, N., Hiramatsu, H., Hasegawa, J., Onda, S., Tsuboi, H., Takaba, H., & Miyamoto, A. (2009). Simulation study for HTCVD of SiC using first-principles calculation and thermo-fluid analysis. In A. Suzuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & T. Fuyuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 47-50). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908453-11-9.47