Simulation of transmission electron microscope images of dislocations pinned by obstacles

Yuhki Satoh, Takahiro Hatano, Nobuyasu Nita, Kimihiro Nogiwa, Hideki Matsui

Research output: Contribution to journalArticlepeer-review

Abstract

From a direct observation of dislocation-obstacle interaction utilizing in situ straining experiments in transmission electron microscope (TEM), the obstacle strength factor could be evaluated from pinning angles of dislocation cusps. We simulated this process: we produced a dislocation cusp by molecular dynamics simulation of interaction between an edge dislocation and a void or a hard precipitate in copper, and calculated the TEM image by multislice method. In two-beam conditions, cusp images showed inside-outside contrast depending on the sign of the diffracting vector and other variations with the specimen geometry. The pinning angles measured on TEM images ranged up to a few tens of degrees and were between the true angles for the two partial dislocations. Characteristics and contrast mechanisms of cusp images were discussed based on those of dislocation dipoles.

Original languageEnglish
Pages (from-to)413-417
Number of pages5
JournalMaterials Transactions
Volume55
Issue number3
DOIs
Publication statusPublished - 2014 Mar 17

Keywords

  • Dislocation-obstacle interaction
  • Image simulation
  • Irradiation hardening
  • Transmission electron microscope

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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