Simulation of terahertz plasmons in graphene with grating-gate structures

Akira Satou, Victor Ryzhii, Taiichi Otsuji, Fedir T. Vasko, Vladimir V. Mitin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Frequency dispersion and damping mechanisms of two-dimensional plasmons in graphene in the terahert (THz) range are studied by a numerical simulation based on the Boltzmann equation. The fundamental plasmon mode in a singlegrating-gate structure is studied, and the coupling effect of plasmons in the gated and ungated regions are revealed. It is shown that the plasmon frequency as well as its gate-voltage tunability depend strongly on the coupling. It is also demonstrated that damping rates due to the acoustic-phonon scattering at room temperature and short- and finite-range disorder scattering can be on the order of 1011 s-1, depending on the level of disorders.

Original languageEnglish
Title of host publication2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
Pages260-263
Number of pages4
DOIs
Publication statusPublished - 2013 Dec 31
Event18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
Duration: 2013 Sep 32013 Sep 5

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
CountryUnited Kingdom
CityGlasgow
Period13/9/313/9/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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