Simulation of growth rate variation of CVD-Mo film along axial direction in horizontal tubular reactor

Noboru Yoshikawa, Atsushi Kikuchi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In the authors' previous study, the Mo film was chemical-vapour-deposited on the inner wall of a horizontal tubular reactor, using MoCl3 and H2, as a mixture of reactive feed gas. Growth rate distributions along the axial direction of the reactor were obtained under different deposition conditions. In this study, the distribution curves were simulated by using a calculation model, which took the rates of mass transfer, gas phase reaction and surface reaction into consideration. The reaction rate constants were estimated from the mass balance calculation. The simulated growth rate distributions agreed with the experimental results and they were able to explain the tendency of flat distribution at low PH2 and peak formation in the distribution curves at high PH2. It turned out that the change in partial pressure along the axial direction of the reactor became smaller as the total gas flow rate increased. The calculated partial pressure of the intermediate species had a maximum in the area close to the inlet and its order was not strongly dependent on PH2 and PMoCl5. The dependence of fractional conversion from MoCl5 into Mo on the gas composition was discussed, by considering the calculated results.

Original languageEnglish
Pages (from-to)299-305
Number of pages7
JournalMaterials Transactions, JIM
Volume38
Issue number4
DOIs
Publication statusPublished - 1997 Apr

Keywords

  • Chemical vapour deposition
  • Decomposition
  • Gas phase reaction
  • Growth rate distribution
  • Molybdenum
  • Molybdenum chloride
  • Reaction rate
  • Reactive species
  • Simulation

ASJC Scopus subject areas

  • Engineering(all)

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