Simulation of degradation of dielectric breakdown field of thermal SiO2 films due to voids in Si wafers

Yuhki Satoh, Takaaki Shiota, Hisashi Furuya

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Degradation of the dielectric breakdown field of thermal SiO2 film caused by voids that are formed during growth of silicon single crystal has been a serious problem with reliability of MOS devices. To understand the degradation of breakdown field, local thinning of oxide film grown on pits (i.e., voids exposed at the wafer surface) is simulated using a simple model, and the degradation of breakdown field expected from the thinning is compared with experimental reports. In the model, oxide film grown on inner surface of a sphere is calculated by assuming that deformation of oxide film is visco-elastic and that oxidation reaction rate is reduced by compressional normal stress acting on the Si/SiO2 interface. The calculated results show appreciable thinning of oxide film, which explains the low breakdown field observed experimentally. It also helps to understand the unique degradation characteristics reported for pits and voids: lower breakdown field for thicker oxide film and recovery of breakdown field by chemical etching. No clear pit size dependence observed in the experiments suggests that the oxide thinning is localized at corners of voids.

Original languageEnglish
Pages (from-to)398-403
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume47
Issue number2
DOIs
Publication statusPublished - 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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