TY - JOUR
T1 - Simulation analysis of the characteristics of a high magnification imaging optics for the observation of extreme ultraviolet lithography mask to predict phase defect printability
AU - Terasawa, Tsuneo
AU - Arisawa, Yukiyasu
AU - Amano, Tsuyoshi
AU - Yamane, Takeshi
AU - Watanabe, Hidehiro
AU - Toyoda, Mitsunori
AU - Harada, Tetsuo
AU - Kinoshita, Hiroo
PY - 2013/9
Y1 - 2013/9
N2 - By employing simulation, we analyzed the characteristic of the optics of high-magnification multilayer-coated mirror employed for the examination of extreme ultraviolet lithography (EUVL) mask, and we also examined the performance of phase defect printability prediction. The imaging optics comprises Schwarzschild optics and a concave mirror; and it is modeled as an imaging means with an annular-shaped pupil. In this simulation, tilted coherent illumination that was successfully applied in an EUV microscope constructed at a beamline of the NewSUBARU, was assumed. Observation images of mask patterns affected by phase defects were simulated assuming EUVL masks representing half pitches of 16 and 11nm generations; and those simulated results were compared with the simulated reduction-projection images on wafer formed by an exposure tool. Although the high-magnification observation optics does not completely emulate the printed pattern images on wafer it predicts the existence of phase defects and predict the value of their impacts.
AB - By employing simulation, we analyzed the characteristic of the optics of high-magnification multilayer-coated mirror employed for the examination of extreme ultraviolet lithography (EUVL) mask, and we also examined the performance of phase defect printability prediction. The imaging optics comprises Schwarzschild optics and a concave mirror; and it is modeled as an imaging means with an annular-shaped pupil. In this simulation, tilted coherent illumination that was successfully applied in an EUV microscope constructed at a beamline of the NewSUBARU, was assumed. Observation images of mask patterns affected by phase defects were simulated assuming EUVL masks representing half pitches of 16 and 11nm generations; and those simulated results were compared with the simulated reduction-projection images on wafer formed by an exposure tool. Although the high-magnification observation optics does not completely emulate the printed pattern images on wafer it predicts the existence of phase defects and predict the value of their impacts.
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U2 - 10.7567/JJAP.52.096601
DO - 10.7567/JJAP.52.096601
M3 - Article
AN - SCOPUS:84883861489
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9
M1 - 096601
ER -