SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition

M. Sumiya, A. Tsukazaki, S. Fuke, A. Ohtomo, H. Koinuma, M. Kawasaki

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36 Citations (Scopus)


Composition spread ZnO:(Ga,N) films were deposited on ScAlMgO 4 substrates using both temperature gradient method and alternating pulsed laser deposition (PLD) onto two targets of highly-pure and Ga-doped ZnO. The intensity ratios of 14 N 16 O - and 71 Ga 16 O - to that of 70 Zn 16 O - detected by secondary ion mass spectroscopy (SIMS) analysis were found to correspond to N and Ga concentrations (C N and C Ga ), respectively. Incorporation of nitrogen into ZnO film with O-face (-c) polarity deposited by PLD depended strongly on substrate temperature due to thermal-activated desorption of N, while C N into Zn-face (+c) ZnO film was independent of the temperature. The ratio of C N /C Ga in the ZnO:(Ga,N) film covered a wide range including the value of 2, satisfying the theoretical prediction to produce p-type carrier in ZnO, at various C Ga levels (10 18 -10 20 cm -3 ). However, p-type conduction was not observed in Hall bars array patterned on the composition spread films. The temperature gradient method and the quantitative SIMS analysis revealed that simple adjustment of C N /C Ga ratio was not able to lead to production of p-type ZnO film.

Original languageEnglish
Pages (from-to)206-209
Number of pages4
JournalApplied Surface Science
Issue number1-3
Publication statusPublished - 2004 Feb 15


  • Composition spread
  • Polarity
  • Pulsed laser deposition
  • Secondary ion mass spectroscopy
  • Temperature gradient method
  • ZnO:(Ga,N)

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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