Simple fabrication of high density concave nanopyramid array (NPA) on Si surface

S. Sawara, M. Koh, T. Goto, Y. Ando, T. Shinada, I. Ohdomari

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

A simple process to fabricate two-dimensional (2-D) concave nanopyramid array (NPA) with nanometer period on Si surface has been developed by using electron beam (EB) irradiation and wet etching. The enhanced etch rate (ER) of EB-exposed SiO2 in HF-based solution has been utilized. Mask oxide layers with the thicknesses of 11-30 nm were shot with 30-keV focused EB at spot doses ranging from 20 to 140 pC/dot. EB-exposed SiO2 layers were selectively etched by dipping in 1% HF or buffered HF (BHF). The Si substrates were then dipped in anisotropic etchant hydrazine (N2H4·H2O) to form concave NPAs, where patterned SiO2 layers were used as etch mask. By using this simple process, 50-nm period concave NPA with the size of 20 nm was fabricated successfully.

Original languageEnglish
Pages (from-to)481-485
Number of pages5
JournalApplied Surface Science
Volume159
DOIs
Publication statusPublished - 2000 Jun
Externally publishedYes
Event3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
Duration: 1999 Oct 251999 Oct 29

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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