Simple device to measure pressure using the stress impedance effect of amorphous soft magnetic thin film

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Abstract

A simple micro-machined pressure sensor, based on the stress-impedance (SI) effect, was fabricated herein using typical micro-fabrication technologies. To sense pressure, a 1-μm thin, soft magnetic metallic film of FeSiB was sputtered and used as a diaphragm. Its electrical response (impedance change) was measured under pressure in a frequency band from 5 to 500 MHz. A lumped-element equivalent electric circuit was used to separate the impedance of the soft magnetic metal from other parasitic elements. The impedance change clearly depended on the applied pressure. It was also shown that the impedance change could be explained by a change in relative permeability, according to the theory of the SI effect. The radial stress in the diaphragm and the relative permeability exhibited a linear relationship. At a measurement frequency of 200 MHz, the largest sensor response, with a gauge factor of 385.7, was found. It was in the same order as the conventional sensors. As the proposed device is very simple, it has the potential for application as a cheap pressure sensor.

Original languageEnglish
Article number649
JournalMicromachines
Volume11
Issue number7
DOIs
Publication statusPublished - 2020 Jul 1

Keywords

  • Magnetic thin film
  • Micro device
  • Pressure sensing
  • Stress impedance effect

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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