SILICONE-BASED NEGATIVE RESIST (SNR) FOR TWO-LAYER RESIST SYSTEM.

Akinobu Tanaka, Masao Morita, Osamu Kogure

Research output: Contribution to journalArticle

Abstract

A new silicone-based negative resist (SNR) for two-layer resist system was synthesized through chloromethylation of oligomeric diphenyl siloxane. The SNR showed excellent dry etching resistance to O RIE owing to its silicone chain. Moreover, it was seen to have high sensitivity and high resolution under electron beam, X-ray and deep UV application due to use of the chloromethyl groups. Submicron patterns having high aspect ratios can easily be fabricated using an SNR/organic polymer two-layer resist system, one of the most promising technologies for submicron lithography in VLSI manufacturing.

Original languageEnglish
Pages (from-to)2149-2159
Number of pages11
JournalDenki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku
Volume33
Issue number9
Publication statusPublished - 1984 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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