A new silicone-based negative resist (SNR) for two-layer resist system was synthesized through chloromethylation of oligomeric diphenyl siloxane. The SNR showed excellent dry etching resistance to O RIE owing to its silicone chain. Moreover, it was seen to have high sensitivity and high resolution under electron beam, X-ray and deep UV application due to use of the chloromethyl groups. Submicron patterns having high aspect ratios can easily be fabricated using an SNR/organic polymer two-layer resist system, one of the most promising technologies for submicron lithography in VLSI manufacturing.
|Number of pages||11|
|Journal||Denki Tsushin Kenkyusho Kenkyu Jitsuyoka Hokoku|
|Publication status||Published - 1984 Dec 1|
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