TY - GEN
T1 - Silicon thin film growth by pulsed plasma CVD under near-atmospheric pressure
AU - Kitabatake, Hirotatsu
AU - Suemitsu, Maki
AU - Nakajima, Setsuo
AU - Uehara, Tsuyoshi
AU - Toyoshima, Yasutake
PY - 2006/8/23
Y1 - 2006/8/23
N2 - Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Roman ratio of 7.4 were obtained on glass substrates, while epitaxial-like growth occurred when Si(100) substrates were employed, as confirmed by Roman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.
AB - Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Roman ratio of 7.4 were obtained on glass substrates, while epitaxial-like growth occurred when Si(100) substrates were employed, as confirmed by Roman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.
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M3 - Conference contribution
AN - SCOPUS:33747344002
SN - 1558998454
SN - 9781558998452
T3 - Materials Research Society Symposium Proceedings
SP - 297
EP - 302
BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
T2 - 2005 MRS Fall Meeting
Y2 - 28 November 2005 through 2 December 2005
ER -