Silicon thin film growth by pulsed plasma CVD under near-atmospheric pressure

Hirotatsu Kitabatake, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Roman ratio of 7.4 were obtained on glass substrates, while epitaxial-like growth occurred when Si(100) substrates were employed, as confirmed by Roman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

Original languageEnglish
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages297-302
Number of pages6
Publication statusPublished - 2006 Aug 23
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume891
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period05/11/2805/12/2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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