Silicon thin film growth by pulsed plasma CVD under near-atmospheric pressure

Hirotatsu Kitabatake; Maki Suemitsu; Setsuo Nakajima; Tsuyoshi Uehara; Yasutake Toyoshima

Silicon thin film growth by pulsed plasma CVD under near-atmospheric pressure

Hirotatsu Kitabatake, Maki Suemitsu, Setsuo Nakajima, Tsuyoshi Uehara, Yasutake Toyoshima

Information Devices Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Roman ratio of 7.4 were obtained on glass substrates, while epitaxial-like growth occurred when Si(100) substrates were employed, as confirmed by Roman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

Original language	English
Title of host publication	Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages	297-302
Number of pages	6
Publication status	Published - 2006 Aug 23
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: 2005 Nov 28 → 2005 Dec 2

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	891
ISSN (Print)	0272-9172

Other

Other	2005 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	05/11/28 → 05/12/2

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Silicon thin film growth by pulsed plasma CVD under near-atmospheric pressure. / Kitabatake, Hirotatsu; Suemitsu, Maki; Nakajima, Setsuo; Uehara, Tsuyoshi; Toyoshima, Yasutake.

Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. 2006. p. 297-302 (Materials Research Society Symposium Proceedings; Vol. 891).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kitabatake, H, Suemitsu, M, Nakajima, S, Uehara, T & Toyoshima, Y 2006, Silicon thin film growth by pulsed plasma CVD under near-atmospheric pressure. in Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. Materials Research Society Symposium Proceedings, vol. 891, pp. 297-302, 2005 MRS Fall Meeting, Boston, MA, United States, 05/11/28.

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abstract = "Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Roman ratio of 7.4 were obtained on glass substrates, while epitaxial-like growth occurred when Si(100) substrates were employed, as confirmed by Roman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.",

author = "Hirotatsu Kitabatake and Maki Suemitsu and Setsuo Nakajima and Tsuyoshi Uehara and Yasutake Toyoshima",

year = "2006",

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series = "Materials Research Society Symposium Proceedings",

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AU - Kitabatake, Hirotatsu

AU - Suemitsu, Maki

AU - Nakajima, Setsuo

AU - Uehara, Tsuyoshi

AU - Toyoshima, Yasutake

PY - 2006/8/23

Y1 - 2006/8/23

N2 - Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Roman ratio of 7.4 were obtained on glass substrates, while epitaxial-like growth occurred when Si(100) substrates were employed, as confirmed by Roman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

AB - Si Plasma-enhanced chemical vapor deposition (PECVD) at a near-atmospheric pressure (NAP) of 500 Torr has been conducted by using a pulsed-electric-field based NAP-PECVD system. At a growth temperature of 180°C, poly-Si films with a high Roman ratio of 7.4 were obtained on glass substrates, while epitaxial-like growth occurred when Si(100) substrates were employed, as confirmed by Roman-scattering spectroscopy, X-ray diffraction, and a cross-sectional transmission-electron microscopy.

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M3 - Conference contribution

AN - SCOPUS:33747344002

SN - 1558998454

SN - 9781558998452

T3 - Materials Research Society Symposium Proceedings

SP - 297

EP - 302

BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications

T2 - 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

Silicon thin film growth by pulsed plasma CVD under near-atmospheric pressure

Abstract

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ASJC Scopus subject areas

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