Silicon-silicon bonds in the oxide near the SiO2/Si interface

Naozumi Terada, Takashi Haga, Noriyuki Miyata, Kazunori Moriki, Masami Fujisawa, Mizuho Morita, Tadahiro Ohmi, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    The contribution of the SiO2/Si interface structure to optical absorption below the optical absorption edge of fused quartz was studied by measuring the reflectance of thermally grown ultrathin silicon oxide films. From the modified Kramers-Kronig analysis of reflectance, it was found that optical absorption at the photon energy of 7.8 eV arises from SiSi bonds in the oxide film within 1.4 nm of the interface. The approximate areal density of SiSi bonds is 7 × 1014 cm-2 and is approximately equal to the areal density of silicon suboxides determined by X-ray photoelectron spectroscopy.

    Original languageEnglish
    Pages (from-to)832-835
    Number of pages4
    JournalApplied Surface Science
    Volume56-58
    Issue numberPART 2
    DOIs
    Publication statusPublished - 1992

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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