Silicon self-diffusion in heavily B-doped Si using highly pure 30Si epitaxial layer

S. Matsumoto, S. R. Aid, S. Seto, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, Junichi Murota, K. Wada, T. Abe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Si self-diffusivity in heavily B-doped Si at 867-1067°C has been determined directly using highly pure isotope 30Si as a diffusion source. Samples consist of 30Si epi-layer/B-doped natural Si epi-layer/natural Si substrates. Si self-diffusivity increases with the increase of B concentration and its enhancement degree is larger at lower diffusion temperatures. Based on the model of the Fermi level effect, energy levels of donor Si self-interstitial and acceptor vacancy are determined from the analysis of the experimental data. Copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationSilicon Materials Science and Technology X
PublisherElectrochemical Society Inc.
Pages287-297
Number of pages11
Edition2
ISBN (Print)156677439X, 9781566774390
DOIs
Publication statusPublished - 2006 Jan 1
Event10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society - Denver, CO, United States
Duration: 2006 May 72006 May 12

Publication series

NameECS Transactions
Number2
Volume2
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th International Symposium on Silicon Materials Science and Technology - 209th Meeting of the Electrochemical Society
CountryUnited States
CityDenver, CO
Period06/5/706/5/12

ASJC Scopus subject areas

  • Engineering(all)

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