Silicon on insulator for symmetry-converted growth

Y. Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T. Ono, M. Esashi, P. P. Zhang, M. G. Lagally, T. Sakurai

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Integration of metals and semiconductors having three- or sixfold symmetry on device-oriented [i.e., (001)] silicon wafers, which have fourfold symmetry, has been a long-standing challenge. The authors demonstrate that, by using symmetry-converted (111) silicon on insulator, wurtzite-structure gallium nitride, which has threefold symmetry, can be integrated with Si(001). The stability of the symmetry-converted Si(111) layer makes this technique appealing to the commercial integration of wide-ranging important materials onto Si(001) base wafers.

Original languageEnglish
Article number243107
JournalApplied Physics Letters
Volume90
Issue number24
DOIs
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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