Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

Direct nitridation of silicon surface can be realized at a temperature as low as 430 °C by using high-density plasma above 1012 cm-3 featuring low ion bombardment energy below 7 eV. This study shows that stoichiometric silicon nitride can be obtained for the first time at a temperature of 400 °C by precise control of the nitrogen partial pressure to generate N2+ in the plasma. Moreover, hysteresis in the capacitance-voltage data that has been attributed to charge traps in silicon nitride film can be reduced dramatically by adding hydrogen to Ar/N2 plasma for terminating dangling bonds with hydrogen. The dielectric strength of silicon nitride films is nearly equivalent to those of thermally grown silicon nitride and silicon oxide. The leakage current of silicon nitride film is dramatically reduced compared to that of thermally grown silicon oxide even if their equivalent thicknesses are equal. The silicon nitride films have almost no stress-induced leakage current and very little trap generation even in high-field stress.

Original languageEnglish
Pages (from-to)3129-3133
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number5
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment'. Together they form a unique fingerprint.

Cite this