TY - GEN
T1 - Silicon Migration Seal for Wafer-Level Vacuum Encapsulation
AU - Suzuki, Yukio
AU - Dupuit, Victor
AU - Kojima, Toshiya
AU - Suzuki, Hirotaka
AU - Tanaka, Shuji
N1 - Funding Information:
A major part of the manufacturing process was done in a common facility at Microsystem Integration Center, Tohoku University, which is partly supported by the Ministry of Education, Culture, Sports, Science and Technology’s Nanotechnology Platform Project. The authors are grateful to Prof. Y. Kanamori, Tohoku University, for his advice about hydrogen annealing.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/1
Y1 - 2020/1
N2 - Silicon Migration Seal (SMS) is proposed for wafer-level high vacuum encapsulation of MEMS. The sealing of vent holes is done based on silicon surface migration at 1100°C in pure hydrogen 'clean' environment. Compared with the conventional 'Epi-Seal' process, no deposition, and eventually no stress control is needed. A CAP wafer with vent holes is diffusion-bonded with a device wafer, and the vent holes are closed by hydrogen annealing, followed by sacrificial oxide etching. Hermetic sealing is possible by 1200 s SMS process, if the diameter of the vent holes is 0.6 mu mathrm{m} or smaller.
AB - Silicon Migration Seal (SMS) is proposed for wafer-level high vacuum encapsulation of MEMS. The sealing of vent holes is done based on silicon surface migration at 1100°C in pure hydrogen 'clean' environment. Compared with the conventional 'Epi-Seal' process, no deposition, and eventually no stress control is needed. A CAP wafer with vent holes is diffusion-bonded with a device wafer, and the vent holes are closed by hydrogen annealing, followed by sacrificial oxide etching. Hermetic sealing is possible by 1200 s SMS process, if the diameter of the vent holes is 0.6 mu mathrm{m} or smaller.
KW - Epi-Seal
KW - Fusion wafer bonding
KW - Hydrogen anneal
KW - Silicon migration effect
KW - Vacuum encapsulation
KW - Wafer-level packaging
UR - http://www.scopus.com/inward/record.url?scp=85083179171&partnerID=8YFLogxK
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U2 - 10.1109/MEMS46641.2020.9056414
DO - 10.1109/MEMS46641.2020.9056414
M3 - Conference contribution
AN - SCOPUS:85083179171
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 994
EP - 997
BT - 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
Y2 - 18 January 2020 through 22 January 2020
ER -