Silicon Migration Seal for Wafer-Level Vacuum Encapsulation

Yukio Suzuki, Victor Dupuit, Toshiya Kojima, Hirotaka Suzuki, Shuji Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon Migration Seal (SMS) is proposed for wafer-level high vacuum encapsulation of MEMS. The sealing of vent holes is done based on silicon surface migration at 1100°C in pure hydrogen 'clean' environment. Compared with the conventional 'Epi-Seal' process, no deposition, and eventually no stress control is needed. A CAP wafer with vent holes is diffusion-bonded with a device wafer, and the vent holes are closed by hydrogen annealing, followed by sacrificial oxide etching. Hermetic sealing is possible by 1200 s SMS process, if the diameter of the vent holes is 0.6 mu mathrm{m} or smaller.

Original languageEnglish
Title of host publication33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages994-997
Number of pages4
ISBN (Electronic)9781728135809
DOIs
Publication statusPublished - 2020 Jan
Event33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020 - Vancouver, Canada
Duration: 2020 Jan 182020 Jan 22

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume2020-January
ISSN (Print)1084-6999

Conference

Conference33rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2020
CountryCanada
CityVancouver
Period20/1/1820/1/22

Keywords

  • Epi-Seal
  • Fusion wafer bonding
  • Hydrogen anneal
  • Silicon migration effect
  • Vacuum encapsulation
  • Wafer-level packaging

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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