Silicon-hydrogen bonds in silicon oxide near the SiO2/Si interface

Hiroki Ogawa, Naozumi Terada, Kazuhisa Sugiyama, Kazunori Moriki, Noriyuki Miyata, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

The role of hydrogen peroxide in RCA standard clean was roughly clarified by angle-resolved photoelectron spectroscopy and infrared absorption spectroscopy such that the oxidation, by basic hydrogen peroxide results in a negligible amount of SiH bonds in native oxide, while the oxidation by acidic hydrogen peroxide results in a small amount of SiH bonds in native oxide. It is also found that oxidation in a boiling solution of HNO3 results in large amount of SiH bonds in native oxide as in the case of oxidation in a hot solution of HNO3.

Original languageEnglish
Pages (from-to)836-840
Number of pages5
JournalApplied Surface Science
Volume56-58
Issue numberPART 2
DOIs
Publication statusPublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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