TY - JOUR
T1 - Silicon-hydrogen bonds in silicon oxide near the SiO2/Si interface
AU - Ogawa, Hiroki
AU - Terada, Naozumi
AU - Sugiyama, Kazuhisa
AU - Moriki, Kazunori
AU - Miyata, Noriyuki
AU - Aoyama, Takayuki
AU - Sugino, Rinshi
AU - Ito, Takashi
AU - Hattori, Takeo
N1 - Funding Information:
Part of thi', wt~'k was supported by a 1989 Grant-in-Aid for Specially Promoted Research from the Ministry of Education, Science and Culture of Japan.
PY - 1992
Y1 - 1992
N2 - The role of hydrogen peroxide in RCA standard clean was roughly clarified by angle-resolved photoelectron spectroscopy and infrared absorption spectroscopy such that the oxidation, by basic hydrogen peroxide results in a negligible amount of SiH bonds in native oxide, while the oxidation by acidic hydrogen peroxide results in a small amount of SiH bonds in native oxide. It is also found that oxidation in a boiling solution of HNO3 results in large amount of SiH bonds in native oxide as in the case of oxidation in a hot solution of HNO3.
AB - The role of hydrogen peroxide in RCA standard clean was roughly clarified by angle-resolved photoelectron spectroscopy and infrared absorption spectroscopy such that the oxidation, by basic hydrogen peroxide results in a negligible amount of SiH bonds in native oxide, while the oxidation by acidic hydrogen peroxide results in a small amount of SiH bonds in native oxide. It is also found that oxidation in a boiling solution of HNO3 results in large amount of SiH bonds in native oxide as in the case of oxidation in a hot solution of HNO3.
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U2 - 10.1016/0169-4332(92)90347-Z
DO - 10.1016/0169-4332(92)90347-Z
M3 - Article
AN - SCOPUS:0347024499
VL - 56-58
SP - 836
EP - 840
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - PART 2
ER -