Silicon-hydrogen bonds in native oxides formed during wet chemical treatments

Kazuhisa Sugiyama, Takayuki Igarashi, Kazunori Moriki, Yoshikatsu Nagasawa, Takayuki Aoyama, Rinshi Sugino, Takashi Ito, Takeo Hattori

    Research output: Contribution to conferencePaper

    3 Citations (Scopus)

    Abstract

    The existence of Si-H bonds in native oxides were confirmed from the measurement of highly resolved Si 2p photoelectron spectra and Fourier transformed infrared attenuated total reflection. The amount of Si-H bond in native oxides formed in a hot solution of HNO3 is much larger than that formed in native oxides formed in a mixed solution of NH4OH and H2O2. The amount of Si-H bond in native oxides formed in a hot solution of HNO3 is evaluated to be 2.7 × 1014 cm-2$/.

    Original languageEnglish
    Pages1075-1078
    Number of pages4
    DOIs
    Publication statusPublished - 1990
    Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
    Duration: 1990 Aug 221990 Aug 24

    Other

    Other22nd International Conference on Solid State Devices and Materials
    CitySendai, Jpn
    Period90/8/2290/8/24

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Sugiyama, K., Igarashi, T., Moriki, K., Nagasawa, Y., Aoyama, T., Sugino, R., Ito, T., & Hattori, T. (1990). Silicon-hydrogen bonds in native oxides formed during wet chemical treatments. 1075-1078. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, . https://doi.org/10.7567/ssdm.1990.s-f-4