The existence of Si-H bonds in native oxides were confirmed from the measurement of highly resolved Si 2p photoelectron spectra and Fourier transformed infrared attenuated total reflection. The amount of Si-H bond in native oxides formed in a hot solution of HNO3 is much larger than that formed in native oxides formed in a mixed solution of NH4OH and H2O2. The amount of Si-H bond in native oxides formed in a hot solution of HNO3 is evaluated to be 2.7 × 1014 cm-2$/.
|Number of pages||4|
|Publication status||Published - 1990|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90/8/22 → 90/8/24|
ASJC Scopus subject areas