Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar CMOS (BiCMOS) technologies are reviewed in terms of their current status and potential future directions. SiGe HBTs and BiCMOS are promising candidates for both high-speed digital operation and high-frequency analog operation for ICs and LSIs in multigigabit data-communication systems and wide-bandwidth wireless communication systems. SiGe epitaxial growth technologies, typical device structures, fabrication processes, and transistor characteristics of SiGe HBTs and BiCMOS are described. ICs and LSIs based on SiGe HBTs and BiCMOS for optical fiber links and wireless communications are also described.

Original languageEnglish
Title of host publicationSilicon-Germanium (SiGe) Nanostructures
PublisherElsevier Ltd
Pages473-498
Number of pages26
ISBN (Print)9781845696894
DOIs
Publication statusPublished - 2011 Feb
Externally publishedYes

Keywords

  • Bipolar CMOS (BiCMOS)
  • Data communication
  • Heterojunction bipolar transistor (HBT)
  • Silicon-germanium (SiGe)
  • Wireless communication

ASJC Scopus subject areas

  • Materials Science(all)

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