Silicon-germanium (SiGe) crystal growth using chemical vapor deposition

B. Tillack, J. Murota

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)


In this chapter the main aspects of CVD tools and CVD heteroepitaxy processing, including Si surface treatment before epitaxy, are described. Low-temperature SiGe growth is discussed, especially by reviewing data regarding the growth rate and the Ge fraction as functions of different process parameters (partial pressures, temperatures). For the description of the growth mechanism a langmuir-type adsorption scheme is shown. In-situ doping of SiGe by B and P and its usage for HBTs are reviewed, followed by a discussion of the atomic layer processing approach for doping. Finally an outlook is given summarizing topics for further development and improvement.

Original languageEnglish
Title of host publicationSilicon-Germanium (SiGe) Nanostructures
PublisherElsevier Ltd
Number of pages30
ISBN (Print)9781845696894
Publication statusPublished - 2011 Feb
Externally publishedYes


  • Atomic layer doping
  • B and P doping
  • CVD epitaxy
  • Heteroepitaxy
  • SiGe

ASJC Scopus subject areas

  • Materials Science(all)


Dive into the research topics of 'Silicon-germanium (SiGe) crystal growth using chemical vapor deposition'. Together they form a unique fingerprint.

Cite this