Silicon-germanium (SiGe) crystal growth using chemical vapor deposition

B. Tillack, J. Murota

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

In this chapter the main aspects of CVD tools and CVD heteroepitaxy processing, including Si surface treatment before epitaxy, are described. Low-temperature SiGe growth is discussed, especially by reviewing data regarding the growth rate and the Ge fraction as functions of different process parameters (partial pressures, temperatures). For the description of the growth mechanism a langmuir-type adsorption scheme is shown. In-situ doping of SiGe by B and P and its usage for HBTs are reviewed, followed by a discussion of the atomic layer processing approach for doping. Finally an outlook is given summarizing topics for further development and improvement.

Original languageEnglish
Title of host publicationSilicon-Germanium (SiGe) Nanostructures
PublisherElsevier Ltd
Pages117-146
Number of pages30
ISBN (Print)9781845696894
DOIs
Publication statusPublished - 2011 Feb

Keywords

  • Atomic layer doping
  • B and P doping
  • CVD epitaxy
  • Heteroepitaxy
  • SiGe

ASJC Scopus subject areas

  • Materials Science(all)

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    Tillack, B., & Murota, J. (2011). Silicon-germanium (SiGe) crystal growth using chemical vapor deposition. In Silicon-Germanium (SiGe) Nanostructures (pp. 117-146). Elsevier Ltd. https://doi.org/10.1533/9780857091420.2.117