Silicon emission mechanism for oxidation process of non-planar silicon

H. Kageshima, K. Shiraishi, T. Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The advance in the understanding of the mechanism of the silicon oxidation process toward the fine control of 3D MOSFETs is explained. The silicon emission mechanism can be applied to the oxidation process of silicon pillars as well as that of planar silicon. Since the geometrical effect is inevitable for the 3D MOSFETs, the silicon emission mechanism is the key to achieve highperformance non-planar 3D MOSFETs.

Original languageEnglish
Title of host publicationSemiconductors, Dielectrics, and Metals for Nanoelectronics 14
EditorsK. Kita, S. Kar, D. Landheer, D. Misra
PublisherElectrochemical Society Inc.
Pages215-226
Number of pages12
Edition5
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
EventSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2016 Oct 22016 Oct 7

Publication series

NameECS Transactions
Number5
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • Engineering(all)

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    Kageshima, H., Shiraishi, K., & Endoh, T. (2016). Silicon emission mechanism for oxidation process of non-planar silicon. In K. Kita, S. Kar, D. Landheer, & D. Misra (Eds.), Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 (5 ed., pp. 215-226). (ECS Transactions; Vol. 75, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/07505.0215ecst