TY - JOUR
T1 - Silicon-doped indium oxide - A promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method
AU - Hoang, Ha
AU - Sasaki, Kazutaka
AU - Hori, Tatsuki
AU - Tsukagoshi, Kazuhito
AU - Nabatame, Toshihide
AU - Quoc Trinh, Bui Nguyen
AU - Fujiwara, Akihiko
N1 - Funding Information:
In this work, we would like to thank to the Hyogo Overseas Research Network (HORN) Program, Hyogo Earthquake Memorial 21st Century Research Institute, and Grants-in-Aid for Scientific Research (grant No. JP15H03568). Also, we would like to acknowledge the research project supported in 2019, by Vietnam Japan University (VJU) Research Grant Program of Japan International Cooperation Agency (JICA).
Publisher Copyright:
© Published under licence by IOP Publishing Ltd.
PY - 2019/9/30
Y1 - 2019/9/30
N2 - Silicon-doped indium oxide (In-Si-O or ISO) has been investigated as the channel material of thin-film transistor (TFT) for the application of next generation flat panel displays. Because solution processing is simple, low cost and low power consumption in comparison with physical vapour deposition, it is a potential candidate for TFTs fabrication. We have been exploring research on TFT using ISO system via spin coating method. In this work, the performance of 3 at.% Si-doped indium oxide TFT has been improved with the highest mobility of 3.8 cm2/Vs without the passivation layer.
AB - Silicon-doped indium oxide (In-Si-O or ISO) has been investigated as the channel material of thin-film transistor (TFT) for the application of next generation flat panel displays. Because solution processing is simple, low cost and low power consumption in comparison with physical vapour deposition, it is a potential candidate for TFTs fabrication. We have been exploring research on TFT using ISO system via spin coating method. In this work, the performance of 3 at.% Si-doped indium oxide TFT has been improved with the highest mobility of 3.8 cm2/Vs without the passivation layer.
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U2 - 10.1088/1757-899X/625/1/012002
DO - 10.1088/1757-899X/625/1/012002
M3 - Conference article
AN - SCOPUS:85074783157
VL - 625
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
SN - 1757-8981
IS - 1
M1 - 012002
T2 - 2019 3rd International Conference on Materials Engineering and Nano Sciences, ICMENS 2019
Y2 - 26 March 2019 through 28 March 2019
ER -