Silicon-doped indium oxide - A promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method

Ha Hoang, Kazutaka Sasaki, Tatsuki Hori, Kazuhito Tsukagoshi, Toshihide Nabatame, Bui Nguyen Quoc Trinh, Akihiko Fujiwara

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

Silicon-doped indium oxide (In-Si-O or ISO) has been investigated as the channel material of thin-film transistor (TFT) for the application of next generation flat panel displays. Because solution processing is simple, low cost and low power consumption in comparison with physical vapour deposition, it is a potential candidate for TFTs fabrication. We have been exploring research on TFT using ISO system via spin coating method. In this work, the performance of 3 at.% Si-doped indium oxide TFT has been improved with the highest mobility of 3.8 cm2/Vs without the passivation layer.

Original languageEnglish
Article number012002
JournalIOP Conference Series: Materials Science and Engineering
Volume625
Issue number1
DOIs
Publication statusPublished - 2019 Sep 30
Externally publishedYes
Event2019 3rd International Conference on Materials Engineering and Nano Sciences, ICMENS 2019 - Hiroshima, Japan
Duration: 2019 Mar 262019 Mar 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Fingerprint Dive into the research topics of 'Silicon-doped indium oxide - A promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method'. Together they form a unique fingerprint.

  • Cite this