Abstract
Silicon-doped indium oxide (In-Si-O or ISO) has been investigated as the channel material of thin-film transistor (TFT) for the application of next generation flat panel displays. Because solution processing is simple, low cost and low power consumption in comparison with physical vapour deposition, it is a potential candidate for TFTs fabrication. We have been exploring research on TFT using ISO system via spin coating method. In this work, the performance of 3 at.% Si-doped indium oxide TFT has been improved with the highest mobility of 3.8 cm2/Vs without the passivation layer.
| Original language | English |
|---|---|
| Article number | 012002 |
| Journal | IOP Conference Series: Materials Science and Engineering |
| Volume | 625 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2019 Sep 30 |
| Externally published | Yes |
| Event | 2019 3rd International Conference on Materials Engineering and Nano Sciences, ICMENS 2019 - Hiroshima, Japan Duration: 2019 Mar 26 → 2019 Mar 28 |
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
Fingerprint Dive into the research topics of 'Silicon-doped indium oxide - A promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method'. Together they form a unique fingerprint.
Cite this
Hoang, H., Sasaki, K., Hori, T., Tsukagoshi, K., Nabatame, T., Quoc Trinh, B. N., & Fujiwara, A. (2019). Silicon-doped indium oxide - A promising amorphous oxide semiconductor material for thin-film transistor fabricated by spin coating method. IOP Conference Series: Materials Science and Engineering, 625(1), [012002]. https://doi.org/10.1088/1757-899X/625/1/012002