Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation

Shogo Sasaki, Masao Sakuraba, Hisanao Akima, Shigeo Sato

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Epitaxial growth of Si-C alloy films on Si(100) were achieved in the C fraction range up to about 5 at% by surface reaction of SiH4 and CH4 under low-energy Ar plasma irradiation without substrate heating in electron-cyclotron-resonance (ECR) plasma chemical-vapor deposition (CVD). Moreover, it was found that the Si-C alloy (C fraction of 1.4 at%) with an about 1%-larger vertical lattice constant than unstrained Si could be epitaxially grown on Si(100) under perfect lattice matching, which was different from the generally-reported results of tensile-strained Si-C alloy epitaxy on Si(100) at relatively higher temperatures. It was also found that deposition interruption effectively improved crystal quality of the film with an increased strain.

Original languageEnglish
Pages (from-to)188-192
Number of pages5
JournalMaterials Science in Semiconductor Processing
Publication statusPublished - 2017 Nov 1


  • Heteroepitaxial growth
  • Plasma chemical vapor deposition
  • Reciprocal space map
  • Silicon
  • Silicon-Carbon alloy
  • X-ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Silicon-Carbon alloy film formation on Si(100) using SiH<sub>4</sub> and CH<sub>4</sub> reaction under low-energy ECR Ar plasma irradiation'. Together they form a unique fingerprint.

Cite this