Silicon carbide surface micromachining technology by tetramethylsilane- based atmospheric vapor deposition

Y. Hatakeyama, M. Esashi, S. Tanaka

Research output: Contribution to journalConference article

Abstract

Systematic study on selective silicon carbide (SiC) deposition on SiN, SiO 2 and Si was performed. Poly-SiC was deposited by atmospheric pressure vapor deposition (APCVD) using tetramethylsilane (TMS), which allows easy handling and low temperature deposition. We found a process condition enabling the selective SiC deposition as well as a design guideline for SiC surface micromachining based on the selective SiC deposition. If both process condition and design guideline are used, continuous fine-grained SiC films are deposited on SiN and Si, while SiC islands are deposited on Sio 2. SiC films on SiN are used as the microstructures, and SiC islands on SiO 2 are lifted off by SiO 2 sacrificial etching. Finally, movable SiC microstructures were fabricated by the developed surface micromachining technology.

Original languageEnglish
Article number4805481
Pages (from-to)709-712
Number of pages4
JournalProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
DOIs
Publication statusPublished - 2009 Jun 1
Event22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009 - Sorrento, Italy
Duration: 2009 Jan 252009 Jan 29

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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