Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gas

Junichi Murota, Masao Sakuraba, Shoichi Ono

Research output: Contribution to journalArticlepeer-review

51 Citations (Scopus)

Abstract

The separation between surface adsorption and reaction of SiH4 on a Si substrate has been investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. About 0.4 atomic-layer epitaxy per flash-lamp light shot was observed on Si(100) at a substrate temperature of 385°C and at SiH4 partial pressure of 500 Pa. The dependencies of SiH4 surface coverage on the SiH4 partial pressure and shot-to-shot time interval are expressed by the Langmuir adsorption type equation, assuming that the total adsorption site density is equal to the surface atom density.

Original languageEnglish
Pages (from-to)2353-2355
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number19
DOIs
Publication statusPublished - 1993 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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